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NLVHC1G08DTT1G

Onsemi

NLVHC1G08DTT1G by Onsemi

NLVHC1G08DTT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 35ns propagation delay at 5V. AEC-Q100 screened for automotive applications, it has a small outline package and operates b/w -55 to 125 °C.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,164 parts In-Stock

1+ parts

-

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$0.343

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$0.285

10k+ parts

$0.254

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$0.343

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$0.254

DigiKey

USA . 1,164 parts In-Stock

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$0.430

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$0.430

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Verical

USA . 1,164 parts In-Stock

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$0.386

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$0.318

1,164

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$0.318

Distributors (In-Stock)

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Vyrian

USA . 611 parts In-Stock

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$0.011

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$0.011

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Digiode

USA . 2,226 parts In-Stock

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$0.268

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Flip Electronics

USA . 12,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,880 parts In-Stock

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DigiKey Marketplace

USA . 1,164 parts In-Stock

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$0.290

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Distributors (Availability)

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Corphita

USA . 658 parts In-Stock

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$0.254

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658

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Corohmni

South Africa . 66 parts In-Stock

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$0.282

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Perfect Parts

USA . 5,651,520 parts In-Stock

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Authorized Procurement Solutions

USA . 1,251,000 parts In-Stock

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GreenTree Electronics

Israel . 963,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,088 parts In-Stock

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TANS Electronics

Latvia . 5,299 parts In-Stock

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SupplyDigital Components

Austria . 4,922 parts In-Stock

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Problanco Electronics

Mexico . 4,419 parts In-Stock

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Kulean Microsystems

USA . 3,483 parts In-Stock

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UHIMA Technologies

Türkiye . 210 parts In-Stock

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Overview

Discover the cutting-edge NLVHC1G08DTT1G by Onsemi, a top-tier manufacturer renowned for its superior quality logic gates. This product offers lightning-fast propagation delay, making it ideal for high-speed applications. With a wide supply voltage range and military-grade temperature grade, this logic gate ensures reliable performance in any environment. Experience the precision engineering and exceptional value that Onsemi brings to the table with the NLVHC1G08DTT1G, your go-to solution for seamless integration and unmatched efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gate, ensuring reliable performance.

Propagation Delay At Nominal Supply: 35 ns

Low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and space in electronic designs.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common supply voltage, making it compatible with a wide range of electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for use in harsh environments or industrial applications.

Technical Specifications

Logic Gates NLVHC1G08DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

35 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NLVHC1G08DTT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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