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NLVHC1G08DFT1G

Onsemi

NLVHC1G08DFT1G by Onsemi

NLVHC1G08DFT1G by Onsemi is a CMOS Logic Gate with 2 inputs and 35ns propagation delay. Operating at -55 to 125 °C, it has a supply voltage range of 2-6V and load capacitance of 50pF. Ideal for military applications due to AEC-Q100 screening level and small thin profile package style.

Median Price

$0.360

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 948 parts In-Stock

1+ parts

$0.360

100+ parts

$0.136

1k+ parts

$0.070

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948

$0.360

$0.136

$0.070

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Chip1Stop

Japan . 925 parts In-Stock

1+ parts

$0.719

100+ parts

$0.160

1k+ parts

$0.098

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925

$0.719

$0.160

$0.098

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Mouser Electronics

USA . 44 parts In-Stock

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$0.046

44

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$0.046

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Digiode

USA . 1,962 parts In-Stock

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$0.342

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1,962

$0.342

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Cyclops Electronics Ltd

UK . 5,930 parts In-Stock

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Vyrian

USA . 3,054 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 262 parts In-Stock

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$0.046

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262

$0.046

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Vigor

Singapore . 542 parts In-Stock

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$0.130

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542

$0.130

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Corphita

USA . 1,713 parts In-Stock

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$0.324

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1,713

$0.324

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 40,555 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,685 parts In-Stock

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GreenTree Electronics

Israel . 9,009 parts In-Stock

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TANS Electronics

Latvia . 7,650 parts In-Stock

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Kulean Microsystems

USA . 7,509 parts In-Stock

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Problanco Electronics

Mexico . 6,564 parts In-Stock

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,114 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.050

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3,000

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$0.050

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Authorized Procurement Solutions

USA . 2,425 parts In-Stock

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UHIMA Technologies

Türkiye . 500 parts In-Stock

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Overview

Discover the power of the NLVHC1G08DFT1G by Onsemi, a cutting-edge logic gate that delivers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this product is ideal for a wide range of applications. With a fast propagation delay and high-quality construction, this logic gate is designed to exceed expectations. Experience seamless integration, precise functionality, and unmatched durability with the NLVHC1G08DFT1G. Unlock new possibilities and elevate your projects with this exceptional component.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 35 ns

Low propagation delay allows for fast signal processing, making this product suitable for applications requiring quick response times.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level of 5V, making it compatible with a wide range of existing systems and power supplies.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable performance in harsh operating conditions.

Minimum Operating Temperature: -55 °C

Capable of operating in very low temperatures, making it versatile for use in a variety of environments.

Technology: CMOS

Utilizes CMOS technology which offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Logic Gates NLVHC1G08DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

35 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVHC1G08DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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