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NLVHC1G32DFT2G

Onsemi

NLVHC1G32DFT2G by Onsemi

NLVHC1G32DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 90ns propagation delay at 3V. It operates in temperatures from -55 to 125 °C and has a max power supply current of 25mA. Ideal for military applications due to AEC-Q100 screening level and small package size.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,900 parts In-Stock

1+ parts

$0.320

100+ parts

$0.113

1k+ parts

$0.072

10k+ parts

$0.050

5,900

$0.320

$0.113

$0.072

$0.050

Chip1Stop

Japan . 2,904 parts In-Stock

1+ parts

$0.770

100+ parts

$0.161

1k+ parts

$0.100

10k+ parts

-

2,904

$0.770

$0.161

$0.100

-

Rochester

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

$0.045

1k+ parts

$0.037

10k+ parts

$0.033

54,000

-

$0.045

$0.037

$0.033

Verical

USA . 54,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.057

54,000

-

-

-

$0.057

Distributors (In-Stock)

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Digiode

USA . 1,966 parts In-Stock

1+ parts

$0.035

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1,966

$0.035

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Vyrian

USA . 1,556 parts In-Stock

1+ parts

$0.037

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1,556

$0.037

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Flip Electronics

USA . 54,000 parts In-Stock

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54,000

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Chip Stock

USA . 5,090 parts In-Stock

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5,090

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Distributors (Availability)

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Corphita

USA . 1,404 parts In-Stock

1+ parts

$0.033

100+ parts

-

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1,404

$0.033

-

-

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Corohmni

South Africa . 250 parts In-Stock

1+ parts

$0.037

100+ parts

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250

$0.037

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Vigor

Singapore . 281 parts In-Stock

1+ parts

$0.130

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-

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281

$0.130

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Perfect Parts

USA . 29,996 parts In-Stock

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29,996

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Problanco Electronics

Mexico . 8,358 parts In-Stock

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8,358

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TANS Electronics

Latvia . 4,657 parts In-Stock

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4,657

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SupplyDigital Components

Austria . 4,132 parts In-Stock

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4,132

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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GreenTree Electronics

Israel . 2,904 parts In-Stock

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2,904

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Kulean Microsystems

USA . 1,464 parts In-Stock

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1,464

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Microchip USA

USA . 480 parts In-Stock

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480

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UHIMA Technologies

Türkiye . 168 parts In-Stock

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168

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Overview

Unlock endless possibilities with the NLVHC1G32DFT2G by Onsemi, a cutting-edge logic gate that delivers unparalleled performance and reliability. Designed with precision and expertise by Onsemi, this logic gate is the epitome of quality and innovation. Ideal for a wide range of applications, this product offers seamless integration, fast propagation delay, and superior functionality. Experience the value and benefits of this exceptional product firsthand and elevate your projects to new heights with the NLVHC1G32DFT2G. Trust in Onsemi for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material is lightweight and durable, making it suitable for various applications.

Propagation Delay At Nominal Supply: 90 ns

Fast propagation delay ensures quick signal processing, which is important in time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality for automotive applications.

No. of Inputs: 2

Having 2 inputs provides versatility and flexibility in logic operations.

Nominal Supply Voltage / Vsup (V): 3

Stable supply voltage of 3V ensures consistent operation of the logic gates.

Load Capacitance (CL): 50 pF

Suitable load capacitance of 50 pF allows for efficient signal transmission and reception.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it ideal for various applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in harsh environments.

Technical Specifications

Logic Gates NLVHC1G32DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2.6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

90 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVHC1G32DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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