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NLVHC1G04DFT1G

Onsemi

NLVHC1G04DFT1G by Onsemi

NLVHC1G04DFT1G by Onsemi is a CMOS Logic Gate with 90ns Propagation Delay, suitable for military applications. Operating b/w -55 to 125 °C, it has a supply voltage range of 2-6V and can handle load capacitance of 50pF. This surface-mount device features a small outline package with dual terminals.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,690 parts In-Stock

1+ parts

$0.400

100+ parts

$0.202

1k+ parts

$0.115

10k+ parts

$0.101

2,690

$0.400

$0.202

$0.115

$0.101

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 597 parts In-Stock

1+ parts

$0.380

100+ parts

-

1k+ parts

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597

$0.380

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Vyrian

USA . 1,294 parts In-Stock

1+ parts

$0.400

100+ parts

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1,294

$0.400

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Flip Electronics

USA . 81,000 parts In-Stock

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81,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 500 parts In-Stock

1+ parts

$0.120

100+ parts

-

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500

$0.120

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Corphita

USA . 1,269 parts In-Stock

1+ parts

$0.360

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1,269

$0.360

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Component Stockers USA

USA . 3,137 parts In-Stock

1+ parts

$0.390

100+ parts

$0.200

1k+ parts

$0.110

10k+ parts

-

3,137

$0.390

$0.200

$0.110

-

Corohmni

South Africa . 149 parts In-Stock

1+ parts

$0.400

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149

$0.400

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Microchip USA

USA . 5,750 parts In-Stock

1+ parts

$0.784

100+ parts

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5,750

$0.784

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Problanco Electronics

Mexico . 6,552 parts In-Stock

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6,552

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Kulean Microsystems

USA . 6,443 parts In-Stock

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6,443

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TANS Electronics

Latvia . 4,601 parts In-Stock

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4,601

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SupplyDigital Components

Austria . 2,858 parts In-Stock

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2,858

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UHIMA Technologies

Türkiye . 696 parts In-Stock

1+ parts

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696

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Overview

Unleash the power of innovation with the NLVHC1G04DFT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Logic Gates that are designed for high performance and reliability. This versatile product is perfect for a wide range of applications, offering customers unbeatable value and benefits. Experience faster signal processing, lower power consumption, and increased efficiency with the NLVHC1G04DFT1G. Upgrade your projects today with this cutting-edge technology and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 90 ns

With a fast propagation delay, this product allows for quick signal transmission and efficient operation.

Surface Mount: YES

Being surface mountable makes installation easier and allows for more compact and space-saving designs.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard voltage of 3V makes it compatible with a wide range of circuits and applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures reliable performance in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it ideal for various electronic devices.

Technical Specifications

Logic Gates NLVHC1G04DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2.6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

90 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVHC1G04DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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