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NLVHC1G08DFT2G

Onsemi

NLVHC1G08DFT2G by Onsemi

The Onsemi NLVHC1G08DFT2G is a CMOS Logic Gate with 2 inputs, 35ns propagation delay at 5V. It has a small outline package and operates in temperatures ranging from -55 to 125 °C. Ideal for military applications requiring high-speed logic operations.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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DigiKey

USA . 2,253 parts In-Stock

1+ parts

$0.330

100+ parts

$0.107

1k+ parts

$0.068

10k+ parts

$0.049

2,253

$0.330

$0.107

$0.068

$0.049

Rochester

USA . 99,000 parts In-Stock

1+ parts

-

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$0.046

1k+ parts

$0.038

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$0.034

99,000

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$0.046

$0.038

$0.034

Verical

USA . 99,000 parts In-Stock

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$0.042

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$0.042

Flip Electronics (Authorized)

USA . 30,000 parts In-Stock

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Mouser Electronics

USA . 17,394 parts In-Stock

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Future Electronics

Canada . 15,000 parts In-Stock

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$0.039

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$0.039

Distributors (In-Stock)

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Digiode

USA . 1,254 parts In-Stock

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$0.035

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Vyrian

USA . 216 parts In-Stock

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$0.037

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Flip Electronics

USA . 30,000 parts In-Stock

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IBS Electronics

USA . 15,000 parts In-Stock

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$0.050

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$0.050

NAC Semi

USA . 12,000 parts In-Stock

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$0.074

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$0.074

Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Corphita

USA . 1,878 parts In-Stock

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$0.033

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Corohmni

South Africa . 240 parts In-Stock

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$0.037

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Component Stockers USA

USA . 135,653 parts In-Stock

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$0.040

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$0.040

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$0.030

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135,653

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$0.040

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Vigor

Singapore . 947 parts In-Stock

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$0.130

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Perfect Parts

USA . 269,338 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 57,696 parts In-Stock

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Authorized Procurement Solutions

USA . 27,000 parts In-Stock

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GreenTree Electronics

Israel . 27,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 3,654 parts In-Stock

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Kepictronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 474 parts In-Stock

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Overview

Elevate your electronics projects with the NLVHC1G08DFT2G logic gate by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology in every component they manufacture. Logic gates play a crucial role in digital circuits, enabling signal processing and data transmission. With a low propagation delay and high maximum I (ol), this logic gate ensures efficient performance while operating at a wide temperature range. Upgrade your designs with the NLVHC1G08DFT2G and experience seamless functionality and precision like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Propagation Delay At Nominal Supply: 35 ns

Low propagation delay ensures fast processing speed in electronic circuits.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving on circuit boards.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high reliability and quality for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, compatible with most electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for industrial applications.

Minimum Operating Temperature: -55 °C

Ability to operate in extremely low temperatures, making it versatile for different environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall performance.

Technical Specifications

Logic Gates NLVHC1G08DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

35 ns

Propagation Delay (tpd):

155 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVHC1G08DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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