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NLV74HCT366ADTRG

Onsemi

NLV74HCT366ADTRG by Onsemi

NLV74HCT366ADTRG by Onsemi is a 6-function logic gate with 180ns propagation delay. Operating b/w -55 to 125 °C, it has a supply voltage range of 2-6V. Ideal for military applications due to AEC-Q100 screening level and CMOS technology.

Median Price

$0.228

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 37,450 parts In-Stock

1+ parts

-

100+ parts

$0.237

1k+ parts

$0.197

10k+ parts

$0.175

37,450

-

$0.237

$0.197

$0.175

Verical

USA . 37,450 parts In-Stock

1+ parts

-

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$0.219

37,450

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-

-

$0.219

Distributors (In-Stock)

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Digiode

USA . 642 parts In-Stock

1+ parts

$0.184

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642

$0.184

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Vyrian

USA . 7,804 parts In-Stock

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7,804

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Distributors (Availability)

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Corphita

USA . 2,065 parts In-Stock

1+ parts

$0.175

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2,065

$0.175

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Corohmni

South Africa . 336 parts In-Stock

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$0.194

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336

$0.194

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Vigor

Singapore . 442 parts In-Stock

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$0.210

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442

$0.210

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Ampacity Inc.

Singapore . 37,248 parts In-Stock

1+ parts

$0.359

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37,248

$0.359

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Microchip USA

USA . 5,170 parts In-Stock

1+ parts

$1.493

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5,170

$1.493

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AZTECH Wire

Italy . 624 parts In-Stock

1+ parts

$18.690

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624

$18.690

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TANS Electronics

Latvia . 7,109 parts In-Stock

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SupplyDigital Components

Austria . 6,273 parts In-Stock

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Problanco Electronics

Mexico . 4,238 parts In-Stock

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Kulean Microsystems

USA . 1,904 parts In-Stock

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UHIMA Technologies

Türkiye . 808 parts In-Stock

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Overview

Enhance your electronic projects with the NLV74HCT366ADTRG by Onsemi, a high-quality logic gate that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is ideal for a wide range of applications. With its innovative design and advanced features, the NLV74HCT366ADTRG ensures seamless operation and precise output characteristics. Experience the value and benefits of this top-of-the-line logic gate, designed to meet the needs of even the most demanding customers. Elevate your projects with the NLV74HCT366ADTRG and enjoy the advantages of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components due to its good insulation properties and durability.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and effort.

No. of Functions: 6

Having multiple functions in one component can help reduce the overall number of components in a circuit, saving space and simplifying design.

Nominal Supply Voltage / Vsup (V): 3

A common supply voltage of 3V makes this component compatible with many standard circuits and power sources.

Propagation Delay (tpd): 180 ns

A low propagation delay helps in faster signal processing and overall system performance.

Maximum Operating Temperature: 125 °C

Being able to operate at high temperatures makes this component suitable for harsh environmental conditions and industrial applications.

Output Characteristics: 3-STATE

The 3-state output allows for high impedance, which can be useful in bus systems and reducing power consumption.

Technology: CMOS

CMOS technology is known for its low power consumption and noise immunity, making this component efficient and reliable.

Technical Specifications

Logic Gates NLV74HCT366ADTRG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

180 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

NLV74HCT366ADTRG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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