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NLV74HCT14ADG

Onsemi

NLV74HCT14ADG by Onsemi

NLV74HCT14ADG by Onsemi is a CMOS Logic Gates IC with 6 functions, 48ns propagation delay at 5V. AEC-Q100 screened for automotive applications, it has a small outline package and operates b/w -55 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,540 parts In-Stock

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Digiode

USA . 1,780 parts In-Stock

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Vigor

Singapore . 147 parts In-Stock

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$0.240

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AZTECH Wire

Italy . 998 parts In-Stock

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$19.810

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998

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$24.583

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$22.371

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$20.158

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Kulean Microsystems

USA . 8,258 parts In-Stock

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SupplyDigital Components

Austria . 7,837 parts In-Stock

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TANS Electronics

Latvia . 7,068 parts In-Stock

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Problanco Electronics

Mexico . 6,083 parts In-Stock

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Corphita

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Microchip USA

USA . 428 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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UHIMA Technologies

Türkiye . 73 parts In-Stock

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Overview

Enhance your electronic circuit designs with the NLV74HCT14ADG by Onsemi. Crafted with precision and expertise, this logic gate offers reliable performance and durability. Ideal for a wide range of applications, this product provides seamless integration and functionality. Trust in Onsemi's reputation for quality and innovation, as they continue to deliver cutting-edge solutions for your technological needs. Elevate your projects with the NLV74HCT14ADG and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 48 ns

Low propagation delay ensures fast response times for processing signals.

Surface Mount: YES

Allows for easy installation and integration into surface mount technology applications.

No. of Functions: 6

Offers multiple logic functions in a single package, saving space and simplifying circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common supply voltage, making it compatible with many systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the logic gates efficient and reliable.

Technical Specifications

Logic Gates NLV74HCT14ADG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

48 ns

Propagation Delay (tpd):

48 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV74HCT14ADG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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