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NLV74HC595AMNTWG

Onsemi

NLV74HC595AMNTWG by Onsemi

NLV74HC595AMNTWG by Onsemi is an 8-bit digital shift register with a supply voltage of 5V and propagation delay of 210ns. It is AEC-Q100 screened, operates b/w -55 to 125 °C, and has TRUE output polarity. Ideal for military-grade applications requiring positive edge triggering and 3-STATE output characteristics.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 24,000 parts In-Stock

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USA . 24,000 parts In-Stock

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Vyrian

USA . 773 parts In-Stock

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USA . 24,000 parts In-Stock

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Digiode

USA . 240 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Vigor

Singapore . 129 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$27.595

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$25.111

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$22.628

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Kulean Microsystems

USA . 4,952 parts In-Stock

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Problanco Electronics

Mexico . 1,423 parts In-Stock

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SupplyDigital Components

Austria . 1,352 parts In-Stock

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Microchip USA

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Corphita

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UHIMA Technologies

Türkiye . 576 parts In-Stock

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TANS Electronics

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Overview

Upgrade your digital shift register performance with the NLV74HC595AMNTWG by Onsemi! Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology in a compact package. Ideal for a wide range of applications, this 8-bit shift register offers fast propagation delay and true output polarity, ensuring seamless operation. With a temperature grade of MILITARY and AEC-Q100 screening level, this chip carrier is designed to withstand even the most demanding environments. Unlock the benefits of true innovation with the NLV74HC595AMNTWG - where quality meets value.

Feature Benefit Bullets

Surface Mount: YES

This allows for easy and convenient installation on circuit boards, making the product suitable for compact electronic devices.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of these package styles ensures efficient heat dissipation and space-saving design for the product, making it ideal for applications with limited space and high temperature requirements.

Propagation Delay (tpd): 210 ns

With a fast propagation delay, this product offers quick processing speed, making it suitable for applications that require high-speed data transfer.

Trigger Type: POSITIVE EDGE

The positive edge trigger type ensures reliable signal processing and synchronization, making the product suitable for applications where precise timing is essential.

Technology: CMOS

The CMOS technology used in this product provides low power consumption and high noise immunity, making it a cost-effective and reliable solution for various digital applications.

Technical Specifications

Digital Shift Registers NLV74HC595AMNTWG attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Count Direction:

RIGHT

Family:

HC/UH

JESD-30 Code:

R-XQCC-N16

JESD-609 Code:

e3

Length:

3.5 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

210 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Type:

POSITIVE EDGE

Width:

2.5 mm

Trade Compliance

NLV74HC595AMNTWG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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