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NLV74HC4094BDR2G

Onsemi

NLV74HC4094BDR2G by Onsemi

SERIAL IN PARALLEL OUT; Temperature Grade: MILITARY; Terminal Form: GULL WING; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR;

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,240 parts In-Stock

1+ parts

$0.410

100+ parts

$0.223

1k+ parts

$0.188

10k+ parts

-

2,240

$0.410

$0.223

$0.188

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,947 parts In-Stock

1+ parts

$0.168

100+ parts

-

1k+ parts

-

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1,947

$0.168

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-

-

Flip Electronics

USA . 30,000 parts In-Stock

1+ parts

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30,000

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Digiode

USA . 232 parts In-Stock

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232

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 213 parts In-Stock

1+ parts

$0.168

100+ parts

-

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-

10k+ parts

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213

$0.168

-

-

-

Component Stockers USA

USA . 3,191 parts In-Stock

1+ parts

$0.530

100+ parts

$0.320

1k+ parts

$0.190

10k+ parts

-

3,191

$0.530

$0.320

$0.190

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Vigor

Singapore . 328 parts In-Stock

1+ parts

$1.270

100+ parts

-

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328

$1.270

-

-

-

Microchip USA

USA . 3,815 parts In-Stock

1+ parts

$1.314

100+ parts

-

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3,815

$1.314

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Kulean Microsystems

USA . 6,252 parts In-Stock

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6,252

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SupplyDigital Components

Austria . 6,033 parts In-Stock

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6,033

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Problanco Electronics

Mexico . 2,391 parts In-Stock

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2,391

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Corphita

USA . 1,799 parts In-Stock

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1,799

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UHIMA Technologies

Türkiye . 931 parts In-Stock

1+ parts

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931

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TANS Electronics

Latvia . 201 parts In-Stock

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201

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Technical Specifications

Digital Shift Registers NLV74HC4094BDR2G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Count Direction:

RIGHT

Family:

HC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum Frequency At Nominal Supply:

4000000 Hz

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay (tpd):

170 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Type:

POSITIVE EDGE

Width:

3.9 mm

Minimum fmax:

4 MHz

Trade Compliance

NLV74HC4094BDR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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