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NLV74HC164BDR2G

Onsemi

NLV74HC164BDR2G by Onsemi

NLV74HC164BDR2G by Onsemi is an 8-bit digital shift register with a supply voltage of 3V. It operates b/w -55 to 125 °C, suitable for military applications. This CMOS technology device has positive edge trigger and is AEC-Q100 compliant, making it ideal for automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,486 parts In-Stock

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Digiode

USA . 1,244 parts In-Stock

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SupplyDigital Components

Austria . 7,952 parts In-Stock

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TANS Electronics

Latvia . 7,269 parts In-Stock

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Kulean Microsystems

USA . 5,990 parts In-Stock

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Problanco Electronics

Mexico . 5,192 parts In-Stock

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Corphita

USA . 2,346 parts In-Stock

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UHIMA Technologies

Türkiye . 430 parts In-Stock

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Corohmni

South Africa . 268 parts In-Stock

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Overview

Unlock the power of seamless data transfer with the NLV74HC164BDR2G by Onsemi. Crafted with precision and expertise, this digital shift register is designed to elevate your electronic projects to new heights. Whether you're working on automotive applications or industrial automation, this product offers unmatched reliability and performance. With a focus on quality and innovation, Onsemi delivers a solution that brings value and efficiency to your work. Elevate your projects with the NLV74HC164BDR2G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount feature provides easy and convenient installation on circuit boards, saving space and reducing assembly time.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures high reliability and quality, making the product suitable for automotive applications where robust performance is required.

No. of Bits: 8

Having 8 bits allows for a wide range of data storage and processing capabilities, making the product versatile and suitable for various digital applications.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V ensures compatibility with standard power sources, making the product easy to integrate into existing systems.

No. of Terminals: 14

With 14 terminals, the product offers flexible connectivity options, allowing for versatile usage in different circuit configurations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures the product's reliability in various environmental conditions, making it suitable for industrial and automotive use.

Trigger Type: POSITIVE EDGE

The positive edge trigger type ensures precise timing and control of data transfer, improving overall performance and efficiency of the product.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows the product to function effectively in cold environments, enhancing its versatility and usability.

Maximum Seated Height: 1.75 mm

The maximum seated height of 1.75mm enables compact and space-saving designs, making the product suitable for applications with limited space constraints.

Output Polarity: TRUE

The true output polarity ensures accurate data representation and transmission, enhancing the overall performance and reliability of the product.

Maximum Supply Voltage (Vsup): 6 V

With a maximum supply voltage of 6V, the product can tolerate higher voltage inputs, providing flexibility in power source selection and compatibility.

Technical Specifications

Digital Shift Registers NLV74HC164BDR2G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Count Direction:

RIGHT

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Logic IC Type:

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Type:

POSITIVE EDGE

Width:

3.9 mm

Trade Compliance

NLV74HC164BDR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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