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NL17SZ175DFT2G

Onsemi

NL17SZ175DFT2G by Onsemi

NL17SZ175DFT2G by Onsemi is a CMOS latch with 6.2ns propagation delay, 16.5ns tpd, and 150MHz fmax. Ideal for military-grade applications requiring positive edge triggering in small outline packages with a supply voltage range of 1.65V to 5.5V.

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Digiode

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Vyrian

USA . 511 parts In-Stock

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Problanco Electronics

Mexico . 8,098 parts In-Stock

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SupplyDigital Components

Austria . 8,045 parts In-Stock

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Kulean Microsystems

USA . 6,623 parts In-Stock

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TANS Electronics

Latvia . 6,020 parts In-Stock

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Corphita

USA . 1,330 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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Corohmni

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Overview

Experience seamless performance and unmatched reliability with the NL17SZ175DFT2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and innovation. This product falls under the category of Latches & Flip-Flops, catering to a wide range of applications. With a nominal supply voltage of 3.3V and a propagation delay of just 6.2ns, this device offers lightning-fast speed and precision. Say goodbye to lagging systems and hello to efficiency with the NL17SZ175DFT2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to environmental factors, making this latch or flip-flop suitable for a variety of applications.

Propagation Delay At Nominal Supply: 6.2 ns

Low propagation delay ensures fast switching speeds, ideal for applications requiring quick response times.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V makes this latch or flip-flop compatible with common voltage levels used in electronic devices.

Load Capacitance (CL): 50 pF

With a low load capacitance, this latch or flip-flop can drive capacitive loads without significant signal degradation.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting external components and supports versatile circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and slim package design saves space on the PCB, making it suitable for crowded board layouts and compact devices.

Maximum I (ol): 24 Amp

High maximum output current capability allows this latch or flip-flop to drive external loads effectively without the need for additional buffer circuits.

Propagation Delay (tpd): 16.5 ns

Low propagation delay ensures minimal signal delay, enabling precise timing in digital circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this latch or flip-flop can withstand harsh environmental conditions and extended operating periods.

Trigger Type: POSITIVE EDGE

Positive edge triggering ensures reliable operation and precise timing control in digital systems.

Minimum Operating Temperature: -55 °C

The wide operating temperature range allows this latch or flip-flop to operate in both extreme cold and hot environments.

Terminal Position: DUAL

Dual terminal positioning enables easy connection to external components and supports versatile circuit configurations.

Maximum Seated Height: 1.1 mm

Low seated height saves space on the PCB and allows for compact device designs.

Width: 1.25 mm

Slim width profile enables space-efficient placement on the PCB and supports compact board layouts.

Output Polarity: TRUE

True output polarity ensures consistent and reliable logic levels in digital signals.

Minimum Supply Voltage (Vsup): 1.65 V

Wide operating voltage range allows this latch or flip-flop to operate in low-power applications or when the supply voltage drops below normal levels.

Length: 2 mm

Compact length dimensions save space on the PCB and support compact circuit designs.

Temperature Grade: MILITARY

Military-grade temperature performance ensures reliability and stability in extreme environmental conditions and critical applications.

Maximum Frequency At Nominal Supply: 150000000 Hz

High maximum frequency capability supports high-speed digital applications and ensures efficient signal processing.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast operation, making this latch or flip-flop energy-efficient and reliable.

Terminal Form: GULL WING

Gull wing terminal form provides secure solder connections and mechanical stability, ensuring reliable performance in harsh operating conditions.

Packing Method: TR

TR packing method offers convenient packaging for automated assembly, reducing handling time and improving production efficiency.

Terminal Pitch: 0.65 mm

Compact terminal pitch enables high-density mounting on the PCB, supporting compact designs and space-efficient layouts.

Minimum fmax: 175 MHz

High minimum fmax value ensures reliable operation at high frequencies, making this latch or flip-flop suitable for high-speed digital applications.

Maximum Supply Voltage (Vsup): 5.5 V

Wide supply voltage range provides flexibility in voltage compatibility and supports various power supply configurations.

Maximum Power Supply Current (ICC): 0.01 mA

Low maximum power supply current consumption minimizes power dissipation and enhances energy efficiency in electronic systems.

Technical Specifications

Latches & Flip-Flops NL17SZ175DFT2G attributes and parameters. Explore more Latches & Flip-Flops devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum Frequency At Nominal Supply:

150000000 Hz

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

6.2 ns

Propagation Delay (tpd):

16.5 ns

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

1.25 mm

Minimum fmax:

175 MHz

Trade Compliance

NL17SZ175DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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