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NL17SZ08XV5T2G-L22087

Onsemi

NL17SZ08XV5T2G-L22087 by Onsemi

NL17SZ08XV5T2G-L22087 by Onsemi is a CMOS Logic Gate with 2 inputs, 1.8V nominal voltage, and 12.7ns propagation delay. Ideal for industrial applications, it operates b/w -40 to 85 °C temperature range and supports a max power supply current of 100mA.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 8,000 parts In-Stock

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$0.037

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$0.037

Distributors (In-Stock)

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NAC Semi

USA . 8,000 parts In-Stock

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$0.058

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IBS Electronics

USA . 8,000 parts In-Stock

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$0.048

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$0.048

Vyrian

USA . 6,101 parts In-Stock

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Digiode

USA . 2,093 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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$0.038

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398

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AZTECH Wire

Italy . 771 parts In-Stock

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$17.380

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SupplyDigital Components

Austria . 4,481 parts In-Stock

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TANS Electronics

Latvia . 4,065 parts In-Stock

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Kulean Microsystems

USA . 2,663 parts In-Stock

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Corphita

USA . 2,290 parts In-Stock

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Problanco Electronics

Mexico . 1,281 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Microchip USA

USA . 328 parts In-Stock

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Overview

Enhance your electronic projects with the NL17SZ08XV5T2G-L22087 logic gate from Onsemi. With a commitment to quality and innovation, Onsemi delivers reliable components that ensure optimal performance. Ideal for a wide range of applications, this logic gate offers seamless integration, efficiency, and precision. Experience the value of smooth operation and enhanced functionality with this versatile product. Upgrade your projects with Onsemi's trusted technology and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and lightweight, making the product easy to handle and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

No. of Inputs: 2

Having 2 inputs provides flexibility in logic operations and allows for a wider range of functions to be performed.

Nominal Supply Voltage / Vsup (V): 1.8

The lower supply voltage of 1.8V helps in reducing power consumption and increasing efficiency.

Propagation Delay (tpd): 12.7 ns

The low propagation delay ensures quick response times and efficient operation in high-speed applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the product can withstand higher temperature environments, making it suitable for industrial use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring reliable performance and energy efficiency.

Technical Specifications

Logic Gates NL17SZ08XV5T2G-L22087 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

12.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.2 mm

Trade Compliance

NL17SZ08XV5T2G-L22087 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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