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NL17SZ04XV5T2G-L22087

Onsemi

NL17SZ04XV5T2G-L22087 by Onsemi

NL17SZ04XV5T2G-L22087 by Onsemi is a CMOS Logic Gate with 5.2ns Propagation Delay, 1.8V Nominal Voltage, and 50pF Load Capacitance. Ideal for industrial applications requiring fast signal processing in compact designs due to its small outline package and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,948 parts In-Stock

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Digiode

USA . 169 parts In-Stock

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169

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Distributors (Availability)

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Microchip USA

USA . 10,259 parts In-Stock

1+ parts

$0.365

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10,259

$0.365

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AZTECH Wire

Italy . 571 parts In-Stock

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$17.670

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571

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Kulean Microsystems

USA . 8,333 parts In-Stock

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8,333

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Problanco Electronics

Mexico . 7,908 parts In-Stock

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7,908

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SupplyDigital Components

Austria . 5,499 parts In-Stock

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5,499

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TANS Electronics

Latvia . 1,555 parts In-Stock

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1,555

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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990

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Corphita

USA . 235 parts In-Stock

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Corohmni

South Africa . 170 parts In-Stock

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Overview

Enhance your design with the NL17SZ04XV5T2G-L22087 by Onsemi, a cutting-edge logic gate that guarantees top-notch performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this product offers unparalleled quality and precision. Ideal for a wide range of applications, this logic gate is perfect for enhancing the efficiency and functionality of your electronic projects. With a nominal supply voltage of 1.8V and a maximum power supply current of 0.01mA, this product provides exceptional value and performance to customers looking for high-quality components. Choose the NL17SZ04XV5T2G-L22087 and experience the advantages of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and protection for the internal components.

Propagation Delay at Nominal Supply: 5.2 ns

Low propagation delay ensures fast operation and efficient performance.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and facilitating automated assembly processes.

Nominal Supply Voltage: 1.8 V

Operates at a low voltage, making it energy-efficient and suitable for low-power applications.

Load Capacitance: 50 pF

Designed to work efficiently with typical load capacitances, ensuring reliable operation.

Maximum I (ol): 24 Amp

Can handle high output current, making it suitable for applications with heavy loads.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, increasing the versatility of the product.

Minimum Operating Temperature: -40 °C

Capable of functioning in cold conditions, ensuring reliability in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Logic Gates NL17SZ04XV5T2G-L22087 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.2 mm

Trade Compliance

NL17SZ04XV5T2G-L22087 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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