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NL17SG34DFT2G

Onsemi

NL17SG34DFT2G by Onsemi

NL17SG34DFT2G by Onsemi is a CMOS Logic Gate with 4.8ns Propagation Delay, 3V Nominal Voltage, and 30pF Load Capacitance. Ideal for military applications due to its MILITARY Temperature Grade, this surface-mount device has a small outline package style and operates b/w -55 °C to 125°C.

Median Price

$0.104

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 108,000 parts In-Stock

1+ parts

-

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$0.112

1k+ parts

$0.093

10k+ parts

$0.083

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$0.112

$0.093

$0.083

Farnell

UK . 108,000 parts In-Stock

1+ parts

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$0.082

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$0.082

Verical

USA . 108,000 parts In-Stock

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$0.104

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$0.104

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Digiode

USA . 412 parts In-Stock

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$0.087

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$0.087

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Vyrian

USA . 3,315 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 401 parts In-Stock

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$0.082

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401

$0.082

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Corphita

USA . 1,777 parts In-Stock

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$0.083

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$0.083

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Component Stockers USA

USA . 68,653 parts In-Stock

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$0.090

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

68,653

$0.090

$0.090

$0.080

$0.080

Vigor

Singapore . 650 parts In-Stock

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$0.090

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650

$0.090

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AZTECH Wire

Italy . 210 parts In-Stock

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$12.690

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Continental Prestige Electronics

USA . 108,000 parts In-Stock

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$0.082

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Kulean Microsystems

USA . 6,607 parts In-Stock

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Problanco Electronics

Mexico . 5,841 parts In-Stock

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SupplyDigital Components

Austria . 1,123 parts In-Stock

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TANS Electronics

Latvia . 1,099 parts In-Stock

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UHIMA Technologies

Türkiye . 866 parts In-Stock

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Microchip USA

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Overview

Discover the cutting-edge NL17SG34DFT2G Logic Gates by Onsemi, crafted with precision and quality. Perfect for a wide range of applications, this product offers lightning-fast 4.8 ns propagation delay at a nominal supply voltage of 3V. Its compact design, with a small outline and thin profile package, makes it ideal for space-constrained projects. Experience the reliability and efficiency of Onsemi's technology with the NL17SG34DFT2G, providing unparalleled performance and value to customers seeking top-tier solutions in the logic gates category.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and resistance to harsh environmental conditions, making the logic gates suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 4.8 ns

Low propagation delay ensures fast processing of signals, making the logic gates suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard supply voltage of 3V, making it compatible with most electronic systems and reducing the need for additional components.

Load Capacitance (CL): 30 pF

The low load capacitance allows for efficient signal transmission and reduces power consumption, making the logic gates energy-efficient.

No. of Terminals: 5

Compact design with a minimal number of terminals makes the logic gates space-saving and suitable for applications where board space is limited.

Maximum I (ol): 8 Amp

High output current capability ensures reliable operation and compatibility with a wide range of devices and circuits.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows the logic gates to function in extreme environments, making them suitable for industrial and automotive applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in high-temperature conditions, making the logic gates ideal for a variety of applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making the logic gates efficient and reliable in various electronic systems.

Technical Specifications

Logic Gates NL17SG34DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SG

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

20 mA

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

22.4 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NL17SG34DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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