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NIS5102QP2HT1

Onsemi

NIS5102QP2HT1 by Onsemi

NIS5102QP2HT1 by Onsemi is a Power Management IC with 12V nominal voltage and 12 power supplies. It features a small outline package style, adjustable threshold, and surface mount capability. Ideal for applications requiring efficient power supply management in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,740 parts In-Stock

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Digiode

USA . 2,423 parts In-Stock

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Semi Source

USA . 9 parts In-Stock

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Rebound Electronics

UK . 5 parts In-Stock

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AZTECH Wire

Italy . 645 parts In-Stock

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$10.620

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645

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SupplyDigital Components

Austria . 4,692 parts In-Stock

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Kulean Microsystems

USA . 4,561 parts In-Stock

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Corphita

USA . 2,199 parts In-Stock

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Vigor

Singapore . 981 parts In-Stock

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Problanco Electronics

Mexico . 707 parts In-Stock

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Microchip USA

USA . 317 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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299

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TANS Electronics

Latvia . 75 parts In-Stock

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UHIMA Technologies

Türkiye . 13 parts In-Stock

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Overview

Enhance your power management solutions with the NIS5102QP2HT1 by Onsemi. This high-quality Power Management IC boasts a square package shape, small outline, and dual terminal position for easy integration into various applications. With a nominal supply voltage of 12V and adjustable threshold feature, this product offers versatility and efficiency. Trust in Onsemi's reputation for reliable products and elevate your power management systems with the NIS5102QP2HT1.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient mounting onto a circuit board, saving space and simplifying assembly process.

Nominal Supply Voltage (Vsup): 12 V

Matches common voltage requirements in many electronic systems, ensuring compatibility.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG

Compact package design with heat sink capability helps in efficient heat dissipation, improving overall performance and reliability.

Maximum Seated Height: 1.95 mm

Low profile design allows for installation in space-constrained applications.

Terminal Finish: TIN LEAD

Provides reliable electrical connections and soldering capabilities.

Peak Reflow Temperature °C: 235

High reflow temperature tolerance ensures durability and longevity during assembly process.

Maximum Supply Voltage (Vsup): 18 V

Higher supply voltage capability allows for versatility in usage across different systems.

Adjustable Threshold: YES

Ability to adjust threshold levels provides flexibility in customization for specific application requirements.

Technical Specifications

Power Management ICs NIS5102QP2HT1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XDSO-N12

JESD-609 Code:

e0

Length:

9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC12,.36

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG

Peak Reflow Temperature (C):

235

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.95 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

9 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

9 mm

Trade Compliance

NIS5102QP2HT1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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