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NCV7708ADWR2G

Onsemi

NCV7708ADWR2G by Onsemi

NCV7708ADWR2G by Onsemi is a Motion Control IC with 28 terminals, operating at supply voltages of 3.3V or 5V. It features a max output current of 1A and peak reflow temperature of 260 °C. Ideal for stepper motor control applications due to its small outline package and dual terminal position.

Median Price

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Lifecycle Status

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3

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1k+

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AZTECH Wire

Italy . 1,153 parts In-Stock

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Kulean Microsystems

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A-Z Elektronik GmbH

Germany . 1,844 parts In-Stock

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Overview

Enhance your motion control systems with the NCV7708ADWR2G by Onsemi. Crafted with precision and expertise, this stepper motor controller boasts top-notch quality and reliability. Perfect for a wide range of applications in the motion control industry, this product offers unmatched value, benefits, and advantages to customers. Experience seamless operation and superior performance with the NCV7708ADWR2G, setting a new standard in motion control ICs. Trust Onsemi to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is cost-effective, lightweight, and durable, making the product suitable for various applications.

Nominal Supply Voltage (Vsup): 3.3 V

Operating at a nominal supply voltage of 3.3V ensures compatibility with standard power sources, making integration easier.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options and flexibility in designing circuits and connections.

Power Supplies (V): 3.3/5

Supporting multiple power supply options of 3.3V and 5V increases compatibility with different systems and power sources.

Maximum Output Current: 1 A

With a maximum output current of 1A, the product can drive motor loads efficiently and reliably.

Technical Specifications

Motion Control ICs NCV7708ADWR2G attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

Additional Features:

ALSO OPERATES AT 5V NOMINAL SUPPLY

Other IC type:

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3

Length:

17.925 mm

No. of Functions:

1

No. of Terminals:

28

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

4 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

7.5 mm

Trade Compliance

NCV7708ADWR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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