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NCV47722PDAJR2G

Onsemi

NCV47722PDAJR2G by Onsemi

NCV47722PDAJR2G by Onsemi is a small outline peripheral driver with built-in protections for over current and thermal issues. It operates b/w -40 to 150 °C, suitable for automotive applications. With a max supply voltage of 40 V and output current of 0.25 A, it offers reliable performance in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,241 parts In-Stock

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Vyrian

USA . 1,051 parts In-Stock

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Problanco Electronics

Mexico . 7,221 parts In-Stock

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TANS Electronics

Latvia . 5,998 parts In-Stock

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Kulean Microsystems

USA . 5,954 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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SupplyDigital Components

Austria . 474 parts In-Stock

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Corphita

USA . 345 parts In-Stock

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UHIMA Technologies

Türkiye . 103 parts In-Stock

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Overview

Enhance your automotive applications with the NCV47722PDAJR2G by Onsemi. This top-quality peripheral driver offers built-in protections against over current and thermal issues, ensuring reliable performance in challenging environments. With a wide supply voltage range and compact package design, this product provides valuable benefits such as efficiency and space-saving solutions for your projects. Trust Onsemi's expertise in manufacturing to deliver exceptional quality and innovation in every component. Elevate your designs with the NCV47722PDAJR2G and experience superior performance and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for automotive applications.

Screen Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 40 V

Can handle high voltage inputs, making it versatile for various applications where higher voltages are required.

Built-in Protections: OVER CURRENT; THERMAL

The built-in protections ensure the safety and longevity of the product by preventing damage from overcurrent or excessive heat.

Maximum Output Current: 0.25 A

Capable of delivering a decent output current, suitable for driving peripheral devices efficiently.

Technical Specifications

Peripheral Drivers NCV47722PDAJR2G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER CURRENT; THERMAL

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

3.9 mm

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current:

25 mA

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

4.4 V

Nominal Supply Voltage:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-on Time:

25 us

Width:

4.9 mm

Trade Compliance

NCV47722PDAJR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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