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NCP349MNBGTBG

Onsemi

NCP349MNBGTBG by Onsemi

NCP349MNBGTBG by Onsemi is a MOSFET gate driver with 6 terminals, operating voltage range of 1.2V to 28V, and temperature grade up to 85 °C. It is designed for industrial applications requiring AND gate based interface ICs in compact SMD packages with dual terminal positions.

Median Price

$0.424

Lifecycle Status

EOL

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 15,000 parts In-Stock

1+ parts

-

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$0.432

10k+ parts

$0.385

15,000

-

-

$0.432

$0.385

Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.416

1k+ parts

$0.345

10k+ parts

$0.308

15,000

-

$0.416

$0.345

$0.308

Flip Electronics (Authorized)

USA . 2,142 parts In-Stock

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Vyrian

USA . 8,566 parts In-Stock

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Semtec, LLC

USA . 5,998 parts In-Stock

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Flip Electronics

USA . 2,142 parts In-Stock

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Digiode

USA . 876 parts In-Stock

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876

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Chip Stock

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Distributors (Availability)

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Microchip USA

USA . 5,128 parts In-Stock

1+ parts

$2.335

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5,128

$2.335

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$3.112

100+ parts

$2.832

1k+ parts

$2.552

10k+ parts

-

500

$3.112

$2.832

$2.552

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AZTECH Wire

Italy . 1,168 parts In-Stock

1+ parts

$20.670

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$20.670

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QUARKTWIN TECHNOLOGY LTD

USA . 14,580 parts In-Stock

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SupplyDigital Components

Austria . 7,754 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 2,940 parts In-Stock

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TANS Electronics

Latvia . 943 parts In-Stock

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Corohmni

South Africa . 482 parts In-Stock

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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Kulean Microsystems

USA . 292 parts In-Stock

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Corphita

USA . 128 parts In-Stock

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Overview

Enhance your electronic designs with the NCP349MNBGTBG MOSFET Gate Driver by Onsemi. Crafted with precision and reliability in mind, this small outline, heat sink included driver offers seamless integration and superior performance. Ideal for a wide range of applications, this industrial-grade driver ensures optimal efficiency and durability. Experience the value of Onsemi's cutting-edge technology and elevate your projects to new heights with the NCP349MNBGTBG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable protection for the internal components of the gate driver, ensuring long-term performance and durability.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving time and effort during assembly.

Maximum Supply Voltage: 28 V

Suitable for a wide range of applications that require higher voltage levels, providing versatility in usage.

Package Shape: RECTANGULAR

Facilitates easy integration into existing circuit designs and layouts, making it compatible with standard PCB configurations.

Minimum Operating Temperature: -40 °C

Ensures reliable operation even in extremely cold environments, making it suitable for a variety of industrial applications.

Nominal Supply Voltage: 5 V

Optimal voltage level for efficient and stable performance, balancing power consumption and operational requirements.

Technical Specifications

MOSFET Gate Drivers NCP349MNBGTBG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

28 V

Minimum Supply Voltage:

1.2 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

NCP349MNBGTBG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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