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NCP3420MNR2G

Onsemi

NCP3420MNR2G by Onsemi

NCP3420MNR2G by Onsemi is a MOSFET Gate Driver with 12V power supply, 13.2V max supply voltage, and 85 °C max operating temp. Ideal for half-bridge based applications due to its small outline package style and high side driver feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,999 parts In-Stock

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Digiode

USA . 2,044 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$10.050

100+ parts

$9.146

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$8.241

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150

$10.050

$9.146

$8.241

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AZTECH Wire

Italy . 1,213 parts In-Stock

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$13.610

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Component Stockers USA

USA . 778 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 5,992 parts In-Stock

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Kulean Microsystems

USA . 5,363 parts In-Stock

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Problanco Electronics

Mexico . 4,548 parts In-Stock

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SupplyDigital Components

Austria . 3,604 parts In-Stock

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Corphita

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Microchip USA

USA . 327 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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Kepictronics

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Overview

Unlock the power of your electronics with the NCP3420MNR2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality MOSFET Gate Drivers that are perfect for a wide range of applications. From high side driving to low side driving, this versatile product offers unparalleled reliability and performance. With a maximum supply voltage of 13.2V and a compact design, the NCP3420MNR2G provides the perfect solution for your power management needs. Trust Onsemi to provide you with the best-in-class products that will take your projects to the next level.

Feature Benefit Bullets

Surface Mount: YES

Ease of installation and space-saving design make it suitable for compact applications.

Maximum Supply Voltage: 13.2 V

Capable of handling higher supply voltages, providing flexibility in different circuit designs.

Package Shape: SQUARE

Square shape allows for efficient placement on circuit boards and maximizes use of available space.

Power Supplies (V): 12

Matches common power supply voltages, ensuring compatibility with various systems.

No. of Terminals: 8

Sufficient number of terminals for connecting to other components and peripherals in the circuit.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Combination of small outline, heat sink/slug, and thin profile enhances thermal management and overall performance.

Minimum Supply Voltage: 4.6 V

Operates reliably with low supply voltages, offering flexibility in power source selection.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, making it suitable for demanding environmental conditions.

Minimum Operating Temperature: 0 °C

Capable of functioning in low-temperature environments, increasing its versatility.

Terminal Finish: Nickel/Gold/Palladium (Ni/Au/Pd)

High-quality terminal finish provides excellent conductivity and corrosion resistance for enhanced long-term reliability.

Terminal Position: DUAL

Dual terminal positions allow for flexible PCB layout and ease of connection to other components.

Maximum Seated Height: 1 mm

Low seated height helps in maintaining a slim profile and reducing overall size of the device.

Width: 3 mm

Compact width enables easy placement on the PCB and efficient use of space.

High Side Driver: YES

High side driver capability enhances circuit design options and flexibility in controlling power MOSFETs.

Length: 3 mm

Compact length facilitates space-saving installation and integration into tight layouts.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and supports eco-friendly manufacturing.

Nominal Supply Voltage: 12 V

Matches common nominal supply voltages, ensuring compatibility with standard power sources.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for close spacing and high-density mounting on the PCB.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Specialized interface IC type supports efficient half-bridge configurations for driving power MOSFETs effectively.

Technical Specifications

MOSFET Gate Drivers NCP3420MNR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-XDSO-N8

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.6 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Gold/Palladium (Ni/Au/Pd)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Trade Compliance

NCP3420MNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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