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NCP303LSN45T1G

Onsemi

NCP303LSN45T1G by Onsemi

NCP303LSN45T1G by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package style, dual terminal position, and operates in temperatures from -40°C to 125°C. This CMOS technology IC has a matte tin finish and is surface mountable.

Median Price

$0.152

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Avnet

USA . 6,000 parts In-Stock

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Chip Stock

USA . 46,500 parts In-Stock

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Flip Electronics

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Sensible Micro Corp

USA . 6,659 parts In-Stock

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Vyrian

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NexGen Digital

USA . 3,000 parts In-Stock

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Digiode

USA . 2,026 parts In-Stock

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Pegasus Components GmbH

Germany . 2,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,525 parts In-Stock

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ComSIT USA

USA . 1,525 parts In-Stock

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Rebound Electronics

UK . 1,395 parts In-Stock

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Bristol Electronics

USA . 1,157 parts In-Stock

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Atlantic Semiconductor

USA . 1,157 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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Prism Electronics

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Vigor

Singapore . 700 parts In-Stock

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$0.450

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$0.450

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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Semicontronic

India . 455 parts In-Stock

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$5.500

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$5.362

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$5.335

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Ampacity Inc.

Singapore . 1,350 parts In-Stock

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$6.500

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AZTECH Wire

Italy . 157 parts In-Stock

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$15.350

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Perfect Parts

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Kepictronics

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TANS Electronics

Latvia . 6,821 parts In-Stock

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Assy Fe

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SupplyDigital Components

Austria . 3,695 parts In-Stock

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Aranea Global

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Kulean Microsystems

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 1,262 parts In-Stock

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Argo Parts USA

USA . 693 parts In-Stock

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Futuretech Components

Singapore . 691 parts In-Stock

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Corphita

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Corohmni

South Africa . 383 parts In-Stock

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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Overview

Elevate your power management capabilities with the NCP303LSN45T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that are designed for a wide range of applications. With a compact design and advanced technology, this IC offers unparalleled performance and reliability. Whether you're looking to optimize energy efficiency or enhance system stability, this product provides the value and benefits you need. Trust Onsemi to provide innovative solutions that meet your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight packaging for the Power Management IC, ensuring long-term reliability and ease of handling.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards, saving time and labor during manufacturing.

Nominal Supply Voltage (Vsup): 1.5 V

Compatible with a wide range of electronic devices that require a 1.5V power supply, making this IC versatile and adaptable.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various applications in different environments.

Width (mm): 1.5 mm

Compact size allows for space-saving installation, ideal for devices with limited board space.

Technical Specifications

Power Management ICs NCP303LSN45T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 4.5V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0014 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.5V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN45T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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