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NCP303LSN32T1G

Onsemi

NCP303LSN32T1G by Onsemi

NCP303LSN32T1G by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and V threshold of +3.2V. Ideal for automotive applications due to its temp grade and support circuit type, it offers a compact package style and dual terminal position for efficient power management in tight spaces.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 47,963 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.211

10k+ parts

$0.188

47,963

-

$0.254

$0.211

$0.188

Distributors (In-Stock)

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Digiode

USA . 2,391 parts In-Stock

1+ parts

$0.198

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-

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2,391

$0.198

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Vyrian

USA . 5,406 parts In-Stock

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5,406

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Chip Stock

USA . 3,622 parts In-Stock

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3,622

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Distributors (Availability)

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Corphita

USA . 703 parts In-Stock

1+ parts

$0.187

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703

$0.187

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Corohmni

South Africa . 481 parts In-Stock

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$0.208

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481

$0.208

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Vigor

Singapore . 279 parts In-Stock

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$0.630

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279

$0.630

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AZTECH Wire

Italy . 962 parts In-Stock

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$15.610

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962

$15.610

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QUARKTWIN TECHNOLOGY LTD

USA . 18,754 parts In-Stock

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Perfect Parts

USA . 11,402 parts In-Stock

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Kulean Microsystems

USA . 8,072 parts In-Stock

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Microchip USA

USA . 5,246 parts In-Stock

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TANS Electronics

Latvia . 4,694 parts In-Stock

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SupplyDigital Components

Austria . 2,813 parts In-Stock

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Kepictronics

USA . 2,270 parts In-Stock

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2,270

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RC Electronics

USA . 2,000 parts In-Stock

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Problanco Electronics

Mexico . 1,221 parts In-Stock

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UHIMA Technologies

Türkiye . 429 parts In-Stock

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429

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Overview

Discover the NCP303LSN32T1G by Onsemi, a top-of-the-line Power Management IC designed to deliver reliable performance and efficiency. With Onsemi's reputation for superior quality and cutting-edge technology, this product offers unmatched value and benefits to customers. Ideal for automotive applications, this IC provides precise power supply support and ensures optimal functionality in extreme temperature conditions. Upgrade your power management system with the NCP303LSN32T1G and experience unparalleled reliability and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 1.5 V

Suitable for a wide range of applications that require this specific voltage.

No. of Terminals: 5

Provides a sufficient number of connections for various inputs and outputs.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it ideal for demanding environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and efficient operation.

Maximum Supply Voltage (Vsup): 10 V

Supports a wide range of input voltages for flexibility in different applications.

Technical Specifications

Power Management ICs NCP303LSN32T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3.2V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.2V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN32T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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