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NCP303LSN32T1

Onsemi

NCP303LSN32T1 by Onsemi

NCP303LSN32T1 by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0012mA, and Vth of +3.2V. It is used in automotive applications for power supply support circuits due to its small outline package and wide operating temperature range from -40 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,966 parts In-Stock

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Digiode

USA . 488 parts In-Stock

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AZTECH Wire

Italy . 289 parts In-Stock

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$15.140

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Component Stockers USA

USA . 305 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 5,988 parts In-Stock

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Problanco Electronics

Mexico . 2,496 parts In-Stock

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SupplyDigital Components

Austria . 2,256 parts In-Stock

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Corphita

USA . 2,019 parts In-Stock

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Kulean Microsystems

USA . 1,109 parts In-Stock

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Vigor

Singapore . 932 parts In-Stock

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Microchip USA

USA . 473 parts In-Stock

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Corohmni

South Africa . 181 parts In-Stock

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the NCP303LSN32T1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Power Management ICs that guarantee superior quality and durability. Ideal for automotive applications, this innovative product offers a wide range of benefits, from its small outline and thin profile design to its optimal supply voltage and dual terminal position. Trust Onsemi to provide cutting-edge technology that meets your power supply support circuit needs, ensuring maximum efficiency and convenience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and provides good insulation for safety purposes.

Surface Mount: YES

Being surface mountable, this product can easily be mounted on a circuit board, saving space and facilitating automated assembly.

Nominal Supply Voltage (Vsup): 1.5 V

The low nominal supply voltage of 1.5V allows for energy-efficient operation and is suitable for various applications requiring lower voltage levels.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this product can withstand extended periods of operation without overheating, ensuring reliability.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and ensures a reliable electrical connection between the IC and the circuit board.

Technology: CMOS

The CMOS technology used in this product offers low power consumption, high noise immunity, and a wide supply voltage range, making it ideal for power management applications.

Technical Specifications

Power Management ICs NCP303LSN32T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3.2V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.2V

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN32T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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