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NCP301LSN45T1

Onsemi

NCP301LSN45T1 by Onsemi

NCP301LSN45T1 by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0014mA, and V range of 0.7-10V. Ideal for automotive applications due to its temperature grade and support circuit type. It comes in a small outline package with dual terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 15,500 parts In-Stock

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Vyrian

USA . 7,928 parts In-Stock

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Digiode

USA . 613 parts In-Stock

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PC Components Company LLC

USA . 515 parts In-Stock

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Bristol Electronics

USA . 515 parts In-Stock

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515

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Distributors (Availability)

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Vigor

Singapore . 250 parts In-Stock

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$0.400

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250

$0.400

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Ampacity Inc.

Singapore . 398 parts In-Stock

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$4.500

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398

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AZTECH Wire

Italy . 1,097 parts In-Stock

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$9.310

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RC Electronics

USA . 18,000 parts In-Stock

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Problanco Electronics

Mexico . 7,052 parts In-Stock

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TANS Electronics

Latvia . 5,674 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,930 parts In-Stock

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Corphita

USA . 2,469 parts In-Stock

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Kulean Microsystems

USA . 2,279 parts In-Stock

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Kepictronics

USA . 329 parts In-Stock

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UHIMA Technologies

Türkiye . 230 parts In-Stock

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Corohmni

South Africa . 192 parts In-Stock

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Overview

Experience unparalleled performance with the NCP301LSN45T1 by Onsemi, a leading manufacturer of Power Management ICs. This innovative product offers a wide range of applications in power supply support circuits, making it a versatile solution for various industries. With a compact design and high-quality materials, this IC ensures reliable performance even in extreme temperatures. Trust Onsemi to deliver cutting-edge technology that enhances efficiency and reliability in your projects. Elevate your systems with the NCP301LSN45T1 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and efficient use of PCB space.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V is suitable for many low-power applications, providing efficient power management.

No. of Terminals: 5

The 5 terminals offer versatile connectivity options, making the product adaptable to different circuit configurations.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, the product can function reliably in harsh environments or extreme cold conditions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures the product's performance and reliability under elevated temperature conditions.

Technology: CMOS

The CMOS technology used in the product offers low power consumption and high noise immunity, enhancing overall efficiency.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that the product meets stringent automotive industry standards for performance and reliability in vehicle applications.

Technical Specifications

Power Management ICs NCP301LSN45T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 4.5V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.7/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0014 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.5V

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN45T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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