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NCP301LSN26T1

Onsemi

NCP301LSN26T1 by Onsemi

NCP301LSN26T1 by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It has a small outline package style, operates b/w -40°C to 125°C, and features dual terminal position. With a peak reflow temperature of 235°C, it supports power supply circuits efficiently.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,260 parts In-Stock

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Digiode

USA . 1,313 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Vigor

Singapore . 689 parts In-Stock

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$0.190

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689

$0.190

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Ampacity Inc.

Singapore . 500 parts In-Stock

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$0.500

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500

$0.500

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AZTECH Wire

Italy . 921 parts In-Stock

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$9.050

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921

$9.050

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SupplyDigital Components

Austria . 7,667 parts In-Stock

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Problanco Electronics

Mexico . 5,547 parts In-Stock

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Kulean Microsystems

USA . 4,122 parts In-Stock

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TANS Electronics

Latvia . 870 parts In-Stock

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Corphita

USA . 615 parts In-Stock

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615

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Netroflash

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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346

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Microchip USA

USA . 238 parts In-Stock

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Corohmni

South Africa . 119 parts In-Stock

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Overview

Enhance your power management solutions with the NCP301LSN26T1 by Onsemi. Designed with precision and reliability in mind, this Power Management IC offers unparalleled performance in a wide range of applications. Whether you're looking to optimize energy efficiency or improve system stability, this product delivers exceptional quality and value. Trust in Onsemi's expertise in cutting-edge technology to elevate your projects to new heights. Choose the NCP301LSN26T1 for superior power management solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the IC, ensuring reliability in various operating conditions.

Surface Mount: YES

Surface mount capability makes it easy to integrate the IC onto circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage (Vsup): 1.5V

Operating at a nominal supply voltage of 1.5V makes this IC compatible with a wide range of applications and power sources.

Power Supplies (V): 0.8/10

Supporting power supplies ranging from 0.8V to 10V, this IC offers flexibility in power input options for different system requirements.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style enhances space efficiency and allows for compact designs in electronic devices.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this IC can withstand high temperature environments, suitable for automotive and industrial applications.

Minimum Operating Temperature: -40 °C

Operating reliably at temperatures as low as -40°C makes this IC suitable for use in cold environments or outdoor applications.

Technical Specifications

Power Management ICs NCP301LSN26T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.6V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.6V

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN26T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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