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MMT08B310T3G

Onsemi

MMT08B310T3G by Onsemi

The Onsemi MMT08B310T3G is a single silicon surge protector with 270V DC off-state voltage and 365V breakdown voltage. It operates b/w -40 °C to 125°C, making it suitable for protecting electronic devices from power surges in various applications. This surface-mount device features a thyristor surge protector configuration and is UL recognized.

Median Price

$14.130

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

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$14.130

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1

$14.130

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Distributors (In-Stock)

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Digiode

USA . 2,196 parts In-Stock

1+ parts

$13.424

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2,196

$13.424

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Vyrian

USA . 2,340 parts In-Stock

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2,340

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Distributors (Availability)

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Corphita

USA . 870 parts In-Stock

1+ parts

$12.717

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870

$12.717

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AZTECH Wire

Italy . 851 parts In-Stock

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$13.710

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851

$13.710

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Corohmni

South Africa . 98 parts In-Stock

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$14.130

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98

$14.130

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Component Stockers USA

USA . 416 parts In-Stock

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$99.990

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416

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,571 parts In-Stock

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7,571

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SupplyDigital Components

Austria . 4,770 parts In-Stock

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4,770

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TANS Electronics

Latvia . 2,879 parts In-Stock

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2,879

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Problanco Electronics

Mexico . 2,094 parts In-Stock

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2,094

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UHIMA Technologies

Türkiye . 398 parts In-Stock

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398

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Perfect Parts

USA . 385 parts In-Stock

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385

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Overview

Shield your electronics with the reliable MMT08B310T3G Silicon Surge Protector by Onsemi. With a maximum breakdown voltage of 365V and UL recognized reference standard, this single configuration device offers peace of mind against power surges. Its compact rectangular package is designed for easy surface mount installation, making it ideal for a wide range of applications. Trust in Onsemi's reputation for quality and innovation to protect your valuable equipment from electrical damage. Elevate your electronics with the MMT08B310T3G and experience uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the surge protector, making it suitable for various environments.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector, making it user-friendly.

Surface Mount: YES

Being surface mountable allows for easy and secure attachment to the circuit board, ensuring stability and reliability.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space and easy integration into the circuit design.

Terminal Form: C BEND

The C bend terminal form provides a secure connection and ensures stable performance of the surge protector.

No. of Terminals: 2

Having 2 terminals simplifies the wiring process and enhances the overall functionality of the surge protector.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes the surge protector compact and easy to fit into tight spaces within electronic devices.

Maximum DC Off-state Voltage: 270 V

With a maximum off-state voltage of 270 V, this surge protector can effectively protect electronic equipment from voltage spikes and surges.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the surge protector remains reliable and functional even in demanding conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type offers fast response time and efficient protection against surges, ensuring the safety of connected devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the surge protector to perform effectively in a wide range of temperature environments.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, enhancing the overall performance and lifespan of the surge protector.

Terminal Position: DUAL

The dual terminal position enables versatile installation options and allows for secure connections in the circuit.

Maximum Breakdown Voltage: 365 V

The high maximum breakdown voltage ensures reliable protection of connected devices against voltage spikes and surges.

Maximum Time At Peak Reflow Temperature (s): 30

The surge protector can withstand peak reflow temperatures for up to 30 seconds, making it durable and suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, the surge protector can undergo reflow soldering processes without compromising its performance.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the surge protector meets safety and quality standards, providing assurance of its reliability and performance.

Technical Specifications

Silicon Surge Protectors MMT08B310T3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

365 V

Configuration:

Maximum DC Off-state Voltage:

270 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

MMT08B310T3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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