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MICROFR-10050-MLP-GP

Onsemi

MICROFR-10050-MLP-GP by Onsemi

MICROFR-10050-MLP-GP by Onsemi is a single avalanche photodiode with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.25V, and max dark current of 146nA. Ideal for surface mount applications in optoelectronics and sensing systems.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,429 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 6,098 parts In-Stock

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Problanco Electronics

Mexico . 5,937 parts In-Stock

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Kulean Microsystems

USA . 4,925 parts In-Stock

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Corphita

USA . 2,334 parts In-Stock

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TANS Electronics

Latvia . 2,093 parts In-Stock

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UHIMA Technologies

Türkiye . 198 parts In-Stock

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Corohmni

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Overview

Experience superior quality and performance with the MICROFR-10050-MLP-GP photodiode from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and innovative products that meet the highest standards. This avalanche photodiode offers precise detection capabilities and is ideal for a wide range of applications. With its compact size and advanced features, the MICROFR-10050-MLP-GP provides exceptional value and benefits to customers looking for high-quality optoelectronic solutions. Elevate your projects with this top-of-the-line photodiode and discover the advantages it brings to your applications.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various optical systems without the need for complex setups.

Size: 1 mm

Compact size allows for space-saving and can be used in applications where size constraints are a concern.

Peak Wavelength (nm): 635

Peak sensitivity at 635 nm makes it ideal for applications requiring detection or sensing at this specific wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode technology offers high sensitivity and low noise, making it suitable for low-light detection applications.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Minimum Reverse Breakdown Voltage: 24.25 V

High reverse breakdown voltage provides protection against voltage spikes, enhancing the longevity of the photodiode.

Shape: SQUARE

Square shape allows for easy alignment and positioning in optical setups, simplifying the integration process.

Minimum Operating Temperature: -40 °C

Wide temperature range enables operation in extreme cold conditions without compromising performance.

Maximum Dark Current: 146 nA

Low dark current ensures minimal noise and high signal-to-noise ratio, making it suitable for low-light applications.

Packing Method: GEL PACK

Gel packing provides protection against environmental factors such as moisture and dust, ensuring the longevity of the photodiode.

Mounting Feature: SURFACE MOUNT

Surface mount design facilitates easy installation on PCBs or other surfaces, making it suitable for automated assembly processes.

Technical Specifications

Photodiodes MICROFR-10050-MLP-GP attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

146 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

GEL PACK

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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