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MICROFR-10010-MLP-TR

Onsemi

MICROFR-10010-MLP-TR by Onsemi

MICROFR-10010-MLP-TR by Onsemi is a single avalanche photodiode with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.25V, and max dark current of 6nA. Ideal for surface mount applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,290 parts In-Stock

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Vyrian

USA . 342 parts In-Stock

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Problanco Electronics

Mexico . 6,151 parts In-Stock

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TANS Electronics

Latvia . 4,891 parts In-Stock

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Kulean Microsystems

USA . 3,335 parts In-Stock

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Corphita

USA . 1,817 parts In-Stock

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SupplyDigital Components

Austria . 1,394 parts In-Stock

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Corohmni

South Africa . 328 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Unleash the power of light with the MICROFR-10010-MLP-TR by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality photodiodes that are perfect for a wide range of applications. From industrial automation to medical devices, this avalanche photodiode offers unbeatable performance and reliability. With a peak wavelength of 635nm and a compact size of 1mm, the MICROFR-10010-MLP-TR is the ideal choice for your optoelectronic needs. Trust Onsemi to provide you with cutting-edge technology that unlocks endless possibilities. Experience the value and benefits of superior quality with the MICROFR-10010-MLP-TR today.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate and use in various applications without the need for additional components.

Size: 1 mm

Compact size allows for flexibility in design and placement, making it suitable for small and compact devices.

Peak Wavelength (nm): 635

Peak wavelength of 635nm makes it ideal for applications requiring sensitivity to red light, such as laser detection or medical imaging.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise, making them ideal for applications requiring high detection accuracy.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures stability and reliability in harsh environments or extended operation periods.

Minimum Reverse Breakdown Voltage: 24.25 V

High reverse breakdown voltage provides protection against overvoltage conditions, increasing the lifespan of the product.

Shape: SQUARE

Square shape allows for easy alignment and integration in systems, providing better sensor performance and accuracy.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in a wide range of environments, including extreme cold conditions.

Maximum Dark Current: 6 nA

Low dark current minimizes noise and improves signal-to-noise ratio in low-light applications, ensuring high detection sensitivity.

Packing Method: TR

TR packing method provides protection during transportation and storage, ensuring the product arrives in optimal condition.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on PCBs, saving time and effort during assembly.

Technical Specifications

Photodiodes MICROFR-10010-MLP-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

6 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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