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MICROFC-30050-SMT

Onsemi

MICROFC-30050-SMT by Onsemi

MICROFC-30050-SMT by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, with reverse breakdown voltage of 24.2V and dark current up to 914nA. Ideal for optoelectronic applications requiring surface mount configuration in silicon semiconductor material.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 1,573 parts In-Stock

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Digiode

USA . 593 parts In-Stock

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TANS Electronics

Latvia . 7,972 parts In-Stock

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SupplyDigital Components

Austria . 7,617 parts In-Stock

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Problanco Electronics

Mexico . 7,167 parts In-Stock

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Kulean Microsystems

USA . 5,423 parts In-Stock

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UHIMA Technologies

Türkiye . 608 parts In-Stock

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Corphita

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Illuminate your projects with the MICROFC-30050-SMT photodiode by Onsemi, a name synonymous with innovation and quality. This square-shaped avalanche photodiode boasts a peak wavelength of 420nm and a minimum reverse breakdown voltage of 24.2V, making it ideal for a wide range of optoelectronic applications. With a maximum dark current of 914nA and a temperature range of -40 to 85 °C, this surface mount device offers superior performance and reliability. Trust Onsemi for cutting-edge technology that delivers value and efficiency to your designs.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for precise control and customization, making this product suitable for advanced applications that require specific performance parameters.

Size: 3 mm

The compact size of 3 mm enables easy integration into various electronic devices and systems without taking up much space.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm makes this photodiode ideal for applications requiring high sensitivity in the blue spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

The use of avalanche photodiode technology offers high sensitivity and low noise characteristics, making this product ideal for low light detection applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this photodiode can withstand elevated temperatures, making it suitable for industrial and high-temperature environments.

Minimum Reverse Breakdown Voltage: 24.2 V

The minimum reverse breakdown voltage of 24.2 V ensures reliable and stable performance under varying conditions, enhancing the overall durability of the product.

Shape: SQUARE

The square shape simplifies the mounting and alignment process, making it easier to integrate this photodiode into different systems and devices.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C allows this photodiode to function effectively in cold environments, expanding its usability in various applications.

Maximum Dark Current: 914 nA

The low maximum dark current of 914 nA ensures minimal noise levels and high signal-to-noise ratio, making this photodiode suitable for precision measurement applications.

Semiconductor Material: Silicon

The use of silicon as the semiconductor material provides good optical and electrical properties, making this photodiode versatile and reliable for a wide range of applications.

Mounting Feature: SURFACE MOUNT

The surface mount feature simplifies the installation process and allows for secure and stable mounting on PCBs or other surfaces, enhancing the overall convenience of using this photodiode.

Technical Specifications

Photodiodes MICROFC-30050-SMT attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

914 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Size:

3 mm

Trade Compliance

MICROFC-30050-SMT Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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