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BPW34BS

Infineon Technologies

BPW34BS by Infineon Technologies

BPW34BS by Infineon Technologies is a single PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 85°C, with reverse breakdown voltage of 32V. Ideal for infrared applications, it has a square shape and surface mount feature.

Median Price

$4.600

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Nova Conductors

Japan . 26 parts In-Stock

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VNN

France . 5,195 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Digiode

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Vyrian

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Prism Electronics

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Modulus Dynamics

Lithuania . 6,457 parts In-Stock

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$0.555

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$0.533

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$0.511

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Netroflash

USA . 1,000 parts In-Stock

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$4.508

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AZTECH Wire

Italy . 380 parts In-Stock

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$5.909

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Ampacity Inc.

Singapore . 500 parts In-Stock

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$10.100

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Perfect Parts

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Corphita

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Overview

Capture the power of light with the Infineon Technologies BPW34BS photodiode. Manufactured by industry leader Infineon Technologies, this square-shaped PIN photodiode offers unparalleled quality and precision in optoelectronic technology. With a peak wavelength of 850nm and a maximum dark current of only 30nA, the BPW34BS is perfect for a wide range of applications, from light sensing to infrared detection. Experience the value and benefits of Infineon's cutting-edge semiconductor materials and surface mount configuration, providing customers with reliable performance and unmatched accuracy in every use. Elevate your projects with the BPW34BS and see the world in a whole new light.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration provides simplicity and ease of use for direct application.

Size: 2.73 mm

Compact size allows for easy integration into various electronic devices and systems.

Peak Wavelength (nm): 850

Peak sensitivity at 850nm makes it ideal for applications requiring sensitivity in the near-infrared spectrum.

Optoelectronic Type: PIN PHOTODIODE

The PIN structure provides high speed and sensitivity, making it suitable for demanding optoelectronic applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Minimum Reverse Breakdown Voltage: 32 V

High reverse breakdown voltage ensures protection against reverse bias conditions and enhances device durability.

Shape: SQUARE

Square shape allows for easy alignment and assembly in electronic circuits and systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in harsh environments with extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier

Matte Tin finish with Nickel barrier provides good solderability and long-term reliability in surface mount applications.

Nominal Light Current: 0.0054 mA

Nominal light current value indicates good sensitivity to light, enabling accurate light detection and measurement.

Maximum Dark Current: 30 nA

Low dark current ensures minimal noise and high signal-to-noise ratio in low light conditions.

Infrared (IR) Range: YES

Infrared range capability expands the potential applications for the photodiode to include infrared light detection.

Maximum Reverse Voltage: 32 V

Maximum reverse voltage rating ensures protection against reverse bias conditions and prevents damage to the device.

Semiconductor Material: Silicon

Silicon material provides high sensitivity, speed, and reliability in optoelectronic applications.

Mounting Feature: SURFACE MOUNT

Surface mount capability enables easy and secure mounting on circuit boards for seamless integration in electronic systems.

Technical Specifications

Photodiodes BPW34BS attributes and parameters. Explore more Photodiodes devices from Infineon Technologies

Specs

Configuration:

SINGLE

Maximum Dark Current:

30 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.0054 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Minimum Reverse Breakdown Voltage:

32 V

Maximum Reverse Voltage:

32 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Size:

2.73 mm

Sub-Category:

Photo Diodes

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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