Loading...

MCR8DSN

Onsemi

MCR8DSN by Onsemi

MCR8DSN by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 90A, and Max On-state Current of 8A. It is ideal for applications requiring SCR trigger devices in circuits where precise current control is needed.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

MCR8DSN by Onsemi
Compare Share

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,037 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,037

-

-

-

-

Vyrian

USA . 1,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,230

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

SupplyDigital Components

Austria . 7,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,568

-

-

-

-

Problanco Electronics

Mexico . 6,059 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,059

-

-

-

-

TANS Electronics

Latvia . 2,284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,284

-

-

-

-

Corphita

USA . 1,067 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,067

-

-

-

-

Kulean Microsystems

USA . 828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

828

-

-

-

-

UHIMA Technologies

Türkiye . 466 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

466

-

-

-

-

Corohmni

South Africa . 410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

410

-

-

-

-

Overview

Unlock the power of MCR8DSN by Onsemi, a high-quality Silicon Controlled Rectifier designed to deliver superior performance in a variety of applications. With reliable manufacturing from Onsemi, this SCR offers exceptional value and benefits for customers seeking efficiency and precision in their electronic systems. Whether you're looking for a surface mount solution or a device with low leakage current, the MCR8DSN has you covered. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

This low gate trigger current allows for precise control and reliable operation of the SCR.

Non Repetitive Peak On-state Current: 90 A

The high peak on-state current capability makes this SCR suitable for handling high current applications with short duration peak loads.

Surface Mount: YES

Surface mount capability makes installation easier and allows for compact designs in modern electronic applications.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR can handle moderate to high current loads efficiently.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss and improved efficiency in standby or off-state conditions.

Maximum Operating Temperature: 110 °C

SCR's with a high maximum operating temperature are suitable for use in harsh environments where temperature fluctuations are common.

Trigger Device Type: SCR

Being an SCR device, it offers robust and reliable switching performance for various applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows for flexible use in both high and low-temperature environments.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient and fast switching of the SCR for precise control.

Repetitive Peak Off-state Voltage: 800 V

With a high off-state voltage rating, this SCR can withstand high voltage applications without breakdown or failure.

Minimum Critical Rate of Rise of Off-state Voltage: 2 V/us

The minimum critical rate of rise of off-state voltage ensures stable operation and protection against voltage spikes or transients.

Maximum Holding Current: 6 mA

The high holding current ensures that the SCR remains in the on-state without false triggering, providing reliable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8DSN attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

2 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

6 mA

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

90 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Trigger Device Type:

SCR

Trade Compliance

MCR8DSN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20