Loading...

MCR8DSN1

Onsemi

MCR8DSN1 by Onsemi

MCR8DSN1 by Onsemi is a Silicon Controlled Rectifier with 1.8V max on-state voltage, 90A non-repetitive peak on-state current, and -40 to 110 °C operating temperature range. Ideal for applications requiring high current handling capabilities in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,038

-

-

-

-

Vyrian

USA . 825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

825

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 8,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,062

-

-

-

-

Corphita

USA . 1,255 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,255

-

-

-

-

TANS Electronics

Latvia . 629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

629

-

-

-

-

Corohmni

South Africa . 425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

425

-

-

-

-

UHIMA Technologies

Türkiye . 286 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

286

-

-

-

-

SupplyDigital Components

Austria . 280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

280

-

-

-

-

Problanco Electronics

Mexico . 199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

199

-

-

-

-

Overview

Upgrade your electronics with the MCR8DSN1 by Onsemi, a top-of-the-line Silicon Controlled Rectifier designed for superior performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this SCR offers a maximum on-state current of 8A and a non-repetitive peak on-state current of 90A, making it ideal for a wide range of applications. Whether you're working on power supplies, motor controls, or lighting systems, this high-quality component will deliver exceptional value and benefits to meet your needs. Trust Onsemi's expertise and invest in the MCR8DSN1 for efficient and reliable operation in your projects.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low voltage drop ensures efficient and reliable operation.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control and less power consumption.

Non Repetitive Peak On-state Current: 90 A

High peak current handling capability for robust performance.

Maximum On-state Current: 8 A

Suitable for medium to high current applications.

Maximum Leakage Current: 0.01 mA

Low leakage current for improved efficiency and reduced heat generation.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for use in various environments.

Trigger Device Type: SCR

SCR technology offers reliable switching and control capabilities.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability and durability.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage for efficient triggering and control.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage capability for versatile applications.

Minimum Critical Rate of Rise of Off-state Voltage: 2 V/us

Fast rate of rise for quick response and protection against voltage spikes.

Maximum Holding Current: 6 mA

The device can hold current above this value without turning off, suitable for various applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8DSN1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

2 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

6 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

90 A

Maximum On-state Voltage:

1.8 V

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

SCR

Trade Compliance

MCR8DSN1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20