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MCR8N

Onsemi

MCR8N by Onsemi

MCR8N by Onsemi is a single SCR with max DC gate trigger current of 15mA and non-repetitive peak on-state current of 80A. It is used in applications requiring a max RMS on-state current of 8A, such as power control systems and industrial automation equipment.

Median Price

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Lifecycle Status

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Digiode

USA . 1,222 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1,000 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

France . 150 parts In-Stock

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Lakeland Logistics Inc

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R&J Components

USA . 100 parts In-Stock

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Bristol Electronics

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LWI Electronics Inc

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 3,984 parts In-Stock

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SupplyDigital Components

Austria . 3,469 parts In-Stock

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Kulean Microsystems

USA . 3,048 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 2,000 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 715 parts In-Stock

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Corohmni

South Africa . 312 parts In-Stock

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A-Plus Industry Inc.

USA . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 84 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MCR8N by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch performance and reliability. This Silicon Controlled Rectifier (SCR) is perfect for a variety of applications, offering a maximum on-state current of 8A and a non-repetitive peak on-state current of 80A. With its easy-to-use single configuration and through-hole terminal form, the MCR8N provides exceptional value and benefits to customers looking for a durable and efficient solution. Upgrade your designs today with the MCR8N from Onsemi!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 15 mA

Efficiently triggers the SCR for optimal performance while keeping power consumption low.

Configuration: SINGLE

Simplified design and installation process, making it easy to integrate into various systems.

Non Repetitive Peak On-state Current: 80 A

Can handle high current loads without issues, suitable for demanding applications.

Package Shape: RECTANGULAR

Space-efficient design allows for easy mounting and placement in tight spaces.

Terminal Form: THROUGH-HOLE

Provides a secure and stable connection point for the SCR within a circuit.

Maximum On-state Current: 8 A

Can handle moderate current loads effectively, suitable for a range of applications.

Maximum Leakage Current: 2 mA

Helps to prevent unnecessary power loss and ensure efficient operation of the SCR.

Repetitive Peak Reverse Voltage: 800 V

Can handle high reverse voltages, making it versatile for different power setups.

No. of Terminals: 3

Provides necessary connectivity for the SCR to function within a circuit.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure placement of the SCR within a system.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without performance degradation.

Trigger Device Type: SCR

Ensures reliable and precise triggering of the SCR for consistent performance.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature conditions without issues, suitable for various environments.

Terminal Finish: TIN LEAD

Provides a reliable coating on the terminals for secure connections and longevity.

Terminal Position: SINGLE

Simplified connection setup, making installation and maintenance easier.

Maximum RMS On-state Current: 8 A

Efficiently handles AC currents, suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 1 V

Low trigger voltage requirement ensures efficient and precise SCR operation.

Case Connection: ANODE

Clearly defines the connection point for the case, simplifying installation and troubleshooting.

Repetitive Peak Off-state Voltage: 800 V

Can handle high off-state voltages, suitable for various power setups.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Helps to protect the SCR from voltage spikes or transients, ensuring stable operation.

Maximum Holding Current: 30 mA

Can hold a certain current level without triggering, providing stability in the circuit.

Peak Reflow Temperature °C: 235

Can withstand high-temperature reflow processes during manufacturing, ensuring product reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8N attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR8N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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