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MCR8DCNT4

Onsemi

MCR8DCNT4 by Onsemi

MCR8DCNT4 by Onsemi is a single SCR with max DC gate trigger current of 15mA and non-repetitive peak on-state current of 80A. It is used in applications requiring a small outline package, such as surface mount designs for controlling currents up to 8A at voltages of 800V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,627 parts In-Stock

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Vyrian

USA . 1,614 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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Kulean Microsystems

USA . 6,662 parts In-Stock

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TANS Electronics

Latvia . 2,829 parts In-Stock

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SupplyDigital Components

Austria . 1,790 parts In-Stock

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Problanco Electronics

Mexico . 1,649 parts In-Stock

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Corphita

USA . 785 parts In-Stock

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UHIMA Technologies

Türkiye . 579 parts In-Stock

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Corohmni

South Africa . 406 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the MCR8DCNT4 SCR by Onsemi. As a leader in semiconductor technology, Onsemi delivers top-quality products that exceed industry standards. The MCR8DCNT4 is ideal for a wide range of applications, from industrial equipment to consumer electronics. With a maximum DC gate trigger current of 15 mA, this SCR offers exceptional efficiency and power management. Experience the value and benefits of the MCR8DCNT4 for your next project and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the internal components of the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 15 mA

With a high maximum DC gate trigger current, this SCR can be easily controlled and triggered, allowing for precise operation.

Configuration: SINGLE

The single configuration simplifies the installation and integration of the SCR into various electronic circuits.

Maximum On-state Current: 8 A

The high maximum on-state current capability of 8 A makes this SCR suitable for applications requiring a reliable and efficient performance.

Repetitive Peak Reverse Voltage: 800 V

The high repetitive peak reverse voltage of 800 V provides effective protection against reverse voltage spikes, ensuring the SCR's reliability in different operating conditions.

Surface Mount: YES

Being surface mountable, this SCR offers easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures that the SCR can function effectively in various environments without overheating or performance degradation.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40 °C, this SCR can also operate efficiently in colder conditions, making it versatile for different temperature environments.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8DCNT4 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR8DCNT4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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