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MCR8DSM

Onsemi

MCR8DSM by Onsemi

MCR8DSM by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 90A, and Max On-state Current of 8A. Ideal for applications requiring SCR technology in circuits with operating temperatures ranging from -40 to 110 °C.

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2

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1k+

MCR8DSM by Onsemi
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Vyrian

USA . 2,496 parts In-Stock

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Digiode

USA . 2,325 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 8,085 parts In-Stock

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Problanco Electronics

Mexico . 5,141 parts In-Stock

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Corphita

USA . 1,235 parts In-Stock

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Corohmni

South Africa . 455 parts In-Stock

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Kulean Microsystems

USA . 257 parts In-Stock

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SupplyDigital Components

Austria . 106 parts In-Stock

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UHIMA Technologies

Türkiye . 9 parts In-Stock

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Overview

Experience the power of reliable performance with the MCR8DSM by Onsemi. As a leading manufacturer in the industry, Onsemi's Silicon Controlled Rectifiers (SCR) are designed to deliver exceptional quality and precision. Whether you're looking for a surface mount solution or a high-performance trigger device, this product offers unmatched value and benefits. From industrial applications to consumer electronics, the MCR8DSM provides the perfect solution for your needs. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control over the SCR, making it suitable for applications requiring accurate switching.

Non Repetitive Peak On-state Current: 90 A

High peak on-state current capability ensures the SCR can handle sudden surges of current without getting damaged, making it reliable in high power applications.

Surface Mount: YES

Surface mount capability makes installation of the SCR easy and efficient, especially in compact electronic devices.

Maximum On-state Current: 8 A

High on-state current rating allows the SCR to handle moderate to high power loads, making it versatile for a wide range of applications.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss when the SCR is in the off state, improving energy efficiency of the system.

Maximum Operating Temperature: 110 °C

Wide operating temperature range enables the SCR to function in harsh environments without compromising performance.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers reliable and precise switching capability, making it a preferred choice in many power control applications.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperature environments makes this SCR suitable for a variety of industrial and commercial applications.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient control over the SCR, reducing power consumption and heat generation in the system.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating allows the SCR to block high voltages reliably, making it suitable for applications requiring voltage regulation and protection.

Minimum Critical Rate of Rise of Off-state Voltage: 2 V/us

Fast rate of rise of off-state voltage capability enhances the SCR's ability to respond quickly to voltage fluctuations, ensuring stable operation in dynamic environments.

Maximum Holding Current: 6 mA

Sufficient holding current ensures the SCR remains in the on state even after the gate signal is removed, making it reliable for continuous operation in various load conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8DSM attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

2 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

6 mA

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

90 A

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Trigger Device Type:

SCR

Trade Compliance

MCR8DSM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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