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MCR8DSM1

Onsemi

MCR8DSM1 by Onsemi

MCR8DSM1 by Onsemi is a Silicon Controlled Rectifier with max on-state voltage of 1.8V, max DC gate trigger current of 0.2mA, and non-repetitive peak on-state current of 90A. It operates b/w -40 to 110 °C and is ideal for applications requiring high current switching capabilities.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 760 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 6,019 parts In-Stock

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Kulean Microsystems

USA . 1,913 parts In-Stock

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TANS Electronics

Latvia . 1,479 parts In-Stock

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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SupplyDigital Components

Austria . 706 parts In-Stock

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Corohmni

South Africa . 266 parts In-Stock

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Corphita

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Overview

Elevate your electrical applications with the MCR8DSM1 from Onsemi. As a leading manufacturer of Silicon Controlled Rectifiers (SCR), Onsemi delivers top-quality products that exceed industry standards. The MCR8DSM1 offers unmatched reliability and performance, making it the perfect choice for a wide range of applications. From industrial equipment to consumer electronics, this SCR provides consistent and efficient power management. Choose Onsemi for cutting-edge technology and superior value.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low on-state voltage helps in reducing power losses and improving efficiency of the device.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures precise control over switching the SCR, making it suitable for various applications.

Non Repetitive Peak On-state Current: 90 A

High peak on-state current capability allows the SCR to handle high transient currents effectively.

Maximum On-state Current: 8 A

High on-state current rating ensures that the SCR can handle higher continuous currents without overheating.

Maximum Leakage Current: 0.01 mA

Low leakage current helps in minimizing power losses and improving the efficiency of the device.

Maximum Operating Temperature: 110 °C

Wide operating temperature range makes the SCR suitable for various environmental conditions.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, it provides precise control over switching operations and offers reliability in diverse applications.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage allows for efficient control over turning on the SCR.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating ensures the SCR can withstand high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 2 V/us

Fast rate of rise of off-state voltage ensures efficient turn-off characteristics and protection against voltage spikes.

Maximum Holding Current: 6 mA

Holding current rating ensures the SCR remains in the on-state after triggering, maintaining stability in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8DSM1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

2 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

6 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

90 A

Maximum On-state Voltage:

1.8 V

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

SCR

Trade Compliance

MCR8DSM1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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