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MCR8DSNT4

Onsemi

MCR8DSNT4 by Onsemi

MCR8DSNT4 by Onsemi is a single SCR with max on-state current of 8A and non-repetitive peak current of 90A. It has a DC gate trigger voltage of 1V, making it suitable for applications requiring high power control in industrial settings. The package is surface mountable and features gull wing terminals, ideal for compact designs where space is limited.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,852 parts In-Stock

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Digiode

USA . 171 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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Problanco Electronics

Mexico . 7,418 parts In-Stock

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SupplyDigital Components

Austria . 7,002 parts In-Stock

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Kulean Microsystems

USA . 6,029 parts In-Stock

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TANS Electronics

Latvia . 4,177 parts In-Stock

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Corphita

USA . 1,674 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Corohmni

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Overview

Discover the power and reliability of the MCR8DSNT4 by Onsemi, a top-of-the-line Silicon Controlled Rectifier that guarantees optimal performance in a variety of applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this SCR offers unparalleled quality and durability. From industrial machinery to consumer electronics, this versatile product delivers exceptional value with its high on-state current, low leakage current, and reliable triggering voltage. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise triggering of the SCR, ensuring efficient performance and control.

Configuration: SINGLE

Simplified design with a single configuration, making it easier to integrate into various electronic systems.

Non Repetitive Peak On-state Current: 90 A

High peak current capability allows the SCR to handle heavy loads without overheating or malfunctioning.

Surface Mount: YES

Ease of installation and compact design for space-saving in electronic applications.

Package Shape: RECTANGULAR

Efficient use of space and easy for mounting onto circuit boards.

Maximum On-state Current: 8 A

Sufficient current rating for medium-power applications, ensuring reliable performance under load.

Maximum Leakage Current: 0.01 mA

Low leakage current minimizes power loss and ensures efficiency in operation.

Repetitive Peak Reverse Voltage: 800 V

High reverse voltage capability for voltage protection and reliable operation in various electronic systems.

No. of Terminals: 2

Simplified connection and installation with only two terminals.

Package Style (Meter): SMALL OUTLINE

Compact size for easy integration into small electronic devices.

Maximum Operating Temperature: 110 °C

Wide temperature range allows for operation in various environments without overheating or performance degradation.

Trigger Device Type: SCR

SCR technology offers fast switching and high power handling capabilities for efficient control in electronic circuits.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures functionality in low-temperature environments.

Terminal Finish: TIN LEAD

Provides a reliable contact surface for connecting the SCR to external circuits.

Terminal Position: SINGLE

Simplified connection with a single terminal position for convenience in installation.

Maximum RMS On-state Current: 8 A

Ensures reliable operation under continuous load conditions without overheating or performance issues.

Maximum DC Gate Trigger Voltage: 1 V

Low trigger voltage requirement for efficient control and operation of the SCR.

Case Connection: ANODE

Anode connection for easy integration into electronic circuits.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage capability for reliable performance in voltage protection applications.

Minimum Critical Rate of Rise of Off-state Voltage: 2 V/us

Ensures fast response to changes in off-state voltage for enhanced protection and performance.

Maximum Holding Current: 6 mA

Sufficient holding current to maintain SCR conduction state without false triggering or failure.

Peak Reflow Temperature °C: 235

High peak reflow temperature for reliable soldering and durability during assembly processes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR8DSNT4 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

2 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

6 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Leakage Current:

.01 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

90 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR8DSNT4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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