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MC74VHC1GT08MU1TCG

Onsemi

MC74VHC1GT08MU1TCG by Onsemi

MC74VHC1GT08MU1TCG by Onsemi is a logic gate with 2 inputs, 11 ns propagation delay at 5V. It has a small outline package style and operates b/w -55 to 125 °C. Ideal for applications requiring fast signal processing in compact designs.

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Lifecycle Status

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1k+

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Vyrian

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Digiode

USA . 1,643 parts In-Stock

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AZTECH Wire

Italy . 598 parts In-Stock

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$15.470

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TANS Electronics

Latvia . 5,376 parts In-Stock

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Kulean Microsystems

USA . 4,238 parts In-Stock

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Problanco Electronics

Mexico . 3,696 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,085 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 194 parts In-Stock

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Overview

Unlock the power of high-quality logic gates with the MC74VHC1GT08MU1TCG by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers top-notch products that meet and exceed industry standards. The MC74VHC1GT08MU1TCG is perfect for a wide range of applications, offering fast propagation delay, 3-state output characteristics, and a compact design that makes it ideal for space-constrained projects. Trust in Onsemi's expertise and invest in the MC74VHC1GT08MU1TCG to experience unmatched performance and reliability in your electronics projects.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY: provides durability and protection to the internal components of the logic gate.

Propagation Delay At Nominal Supply

11 ns: ensures fast response time and efficient signal processing.

Surface Mount

YES: facilitates easy installation on circuit boards, saving time and effort.

No. of Inputs

2: suitable for basic logic operations and simplifies circuit design.

Nominal Supply Voltage / Vsup (V)

5: compatible with standard power sources, making integration into existing systems seamless.

Load Capacitance (CL)

50 pF: ensures stable operation and minimizes signal distortion.

Package Style (Meter)

SMALL OUTLINE, VERY THIN PROFILE: ideal for space-constrained applications and high-density PCB layouts.

Maximum I (ol)

8 Amp: can handle a high output current, making it suitable for driving external loads.

Propagation Delay (tpd)

16.5 ns: ensures reliable signal transmission and minimizes signal skew.

Maximum Operating Temperature

125 °C: can operate in high-temperature environments without compromising performance.

Output Characteristics

3-STATE: provides flexibility in controlling the output signal and allows for tri-state logic operation.

Minimum Operating Temperature

-55 °C: can operate in low-temperature environments without issues.

Terminal Finish

NICKEL PALLADIUM GOLD: offers corrosion resistance and ensures reliable electrical connections.

Terminal Position

DUAL: enhances stability and ensures proper alignment during installation.

Maximum Seated Height

0.55 mm: low profile design saves space and allows for compact assembly.

Width

1 mm: compact size enables easy integration into circuit layouts.

Minimum Supply Voltage (Vsup)

2 V: allows for operation in low-power applications and energy-efficient designs.

Maximum Time At Peak Reflow Temperature (s)

30: can withstand high-temperature reflow processes during assembly.

Peak Reflow Temperature °C

260: can withstand high-temperature soldering processes without damage.

Length

1.45 mm: compact size fits well within limited spacing on PCBs.

Technology

CMOS: offers low power consumption and high noise immunity for efficient operation.

Terminal Form

NO LEAD: environmentally friendly option and compliance with RoHS regulations.

Packing Method

TR: suitable for automated assembly and reduces handling during production.

Terminal Pitch

0.5 mm: standard pitch for easy integration into standard PCB layouts.

Maximum Supply Voltage (Vsup)

5.5 V: allows for operation in a wide range of voltage conditions.

Maximum Power Supply Current (ICC)

50 mA: low current consumption for energy-efficient operation.

Technical Specifications

Logic Gates MC74VHC1GT08MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

16.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

MC74VHC1GT08MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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