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MC74VHC1GT04DF1G

Onsemi

MC74VHC1GT04DF1G by Onsemi

MC74VHC1GT04DF1G by Onsemi is a CMOS Logic Gate with 9.5ns Propagation Delay, 3.3V Nominal Voltage, and 50pF Load Capacitance. Ideal for military applications due to its MILITARY Temperature Grade and small form factor in a PLASTIC/EPOXY package.

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2

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1k+

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Vyrian

USA . 7,452 parts In-Stock

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Digiode

USA . 156 parts In-Stock

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AZTECH Wire

Italy . 1,074 parts In-Stock

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SupplyDigital Components

Austria . 7,524 parts In-Stock

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Problanco Electronics

Mexico . 5,371 parts In-Stock

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Kulean Microsystems

USA . 3,499 parts In-Stock

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TANS Electronics

Latvia . 2,061 parts In-Stock

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Corphita

USA . 1,549 parts In-Stock

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Corohmni

South Africa . 390 parts In-Stock

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UHIMA Technologies

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Microchip USA

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Overview

Discover the unmatched quality and reliability of the MC74VHC1GT04DF1G logic gate by industry-leading manufacturer Onsemi. Ideal for a wide range of applications, this product offers fast propagation delays and low power consumption, making it a valuable asset for your projects. With a compact design and durable construction, this logic gate is perfect for demanding environments. Trust Onsemi to provide high-quality components that deliver exceptional performance every time. Elevate your designs with the MC74VHC1GT04DF1G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the logic gates reliable for long-term use.

Propagation Delay At Nominal Supply: 9.5 ns

Low propagation delay ensures fast signal processing, making these logic gates suitable for applications requiring quick response times.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common supply voltage of 3.3V makes these logic gates compatible with a wide range of systems and devices.

Load Capacitance (CL): 50 pF

With a moderate load capacitance, these logic gates can drive output loads efficiently without causing signal distortion.

Maximum I (ol): 8 Amp

High output current capability allows these logic gates to drive heavy loads, making them suitable for demanding applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions and high temperatures.

Minimum Operating Temperature: -55 °C

Operating at low temperatures down to -55 °C ensures reliable performance in cold environments or during temperature fluctuations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates MC74VHC1GT04DF1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Propagation Delay At Nominal Supply:

9.5 ns

Propagation Delay (tpd):

17.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

MC74VHC1GT04DF1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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