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MC74VHC1G00MU1TCG

Onsemi

MC74VHC1G00MU1TCG by Onsemi

MC74VHC1G00MU1TCG by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay, and 3V nominal voltage. Ideal for military applications due to its MIL-graded temperature range and small outline package style.

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Digiode

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AZTECH Wire

Italy . 316 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,034 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 5,203 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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UHIMA Technologies

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Microchip USA

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Overview

Experience the unmatched quality and reliability of Onsemi with the MC74VHC1G00MU1TCG Logic Gate. This compact and versatile device is ideal for a wide range of applications, offering fast propagation delay and low power consumption. With its military-grade temperature tolerance and durable construction, this logic gate ensures optimal performance in even the most demanding environments. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the MC74VHC1G00MU1TCG Logic Gate today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and installation.

Propagation Delay At Nominal Supply: 10 ns

Fast response time for efficient operation in high-speed applications.

Surface Mount: YES

Convenient installation on circuit boards, saving space and reducing assembly time.

No. of Inputs: 2

Basic logic gate functionality with two input signals for simple logic operations.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard voltage levels for easy integration into existing systems.

Load Capacitance (CL): 50 pF

Suitable for driving moderate capacitive loads.

No. of Terminals: 6

Easy connectivity with other components in the circuit.

Maximum I (ol): 8 Amp

High output current capability for driving external loads.

Maximum Operating Temperature: 125 °C

Suitable for operation in wide temperature range applications.

Minimum Operating Temperature: -55 °C

Reliable performance in harsh environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Corrosion-resistant finish for long-term reliability.

Maximum Seated Height: 0.55 mm

Low profile design for space-constrained applications.

Temperature Grade: MILITARY

Designed to meet stringent military standards for ruggedness and reliability.

Technology: CMOS

Low power consumption and high noise immunity for efficient operation.

Terminal Form: NO LEAD

Lead-free option for environmentally-friendly manufacturing.

Maximum Power Supply Current (ICC): 0.04 mA

Low power consumption for energy-efficient operation.

Technical Specifications

Logic Gates MC74VHC1G00MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

MC74VHC1G00MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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