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MC74HCT366ADR2G

Onsemi

MC74HCT366ADR2G by Onsemi

MC74HCT366ADR2G by Onsemi is a 6-bit logic gate with 36ns propagation delay at 3V. It features 3-STATE output, operates b/w -55 to 125 °C, and has a peak reflow temp of 260 °C. Ideal for military-grade applications requiring fast signal processing in compact designs.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 15,960 parts In-Stock

1+ parts

-

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$0.242

1k+ parts

$0.201

10k+ parts

$0.179

15,960

-

$0.242

$0.201

$0.179

Avnet

USA . 7,500 parts In-Stock

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7,500

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Digiode

USA . 1,592 parts In-Stock

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$0.198

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1,592

$0.198

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Flip Electronics

USA . 28,000 parts In-Stock

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NAC Semi

USA . 25,000 parts In-Stock

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$0.336

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$0.336

Vyrian

USA . 5,135 parts In-Stock

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Component Stockers USA

USA . 441 parts In-Stock

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$0.170

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$0.160

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441

$0.170

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Corphita

USA . 1,096 parts In-Stock

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$0.187

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$0.187

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Corohmni

South Africa . 115 parts In-Stock

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$0.208

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115

$0.208

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AZTECH Wire

Italy . 927 parts In-Stock

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$18.000

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927

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Kulean Microsystems

USA . 7,023 parts In-Stock

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TANS Electronics

Latvia . 6,137 parts In-Stock

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SupplyDigital Components

Austria . 6,132 parts In-Stock

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Problanco Electronics

Mexico . 1,691 parts In-Stock

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UHIMA Technologies

Türkiye . 434 parts In-Stock

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Overview

Discover the MC74HCT366ADR2G by Onsemi, a top-quality Logic Gates product that offers unparalleled performance and reliability. Manufactured by Onsemi, this product is designed to meet the highest standards in the industry. With its 3-STATE output characteristics and inverted polarity, this product is perfect for a wide range of applications. Its small outline package and dual terminal position make it easy to integrate into any project. Enhance your designs with the MC74HCT366ADR2G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 36 ns

Low propagation delay ensures fast processing speed, making this logic gate suitable for applications where quick response time is critical.

No. of Functions: 6

Having 6 functions in one component reduces the need for multiple individual logic gates, saving space and simplifying circuit design.

Nominal Supply Voltage / Vsup (V): 3

Operating at a relatively low supply voltage of 3V makes this logic gate energy efficient and suitable for battery-powered devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environments and prolonged use without overheating.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption and high noise immunity, making this logic gate reliable and efficient.

Technical Specifications

Logic Gates MC74HCT366ADR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Control Type:

ENABLE LOW

Family:

HCT

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

6

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

36 ns

Propagation Delay (tpd):

180 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC74HCT366ADR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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