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MC14106BCPG

Onsemi

MC14106BCPG by Onsemi

MC14106BCPG by Onsemi is a CMOS Logic Gates IC with 6 functions. It has a propagation delay of 250ns at 5V supply, suitable for military-grade applications. The package is rectangular in shape, with through-hole terminals and operates b/w -55 to 125°C temperature range.

Median Price

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Lifecycle Status

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5

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1k+

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Vyrian

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Nova Conductors

Japan . 1,000 parts In-Stock

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Global Solutions Electronics Company

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Digiode

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Semtec, LLC

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AZTECH Wire

Italy . 483 parts In-Stock

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$10.422

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Aztec Data Supply Inc.

USA . 3,640 parts In-Stock

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Ampacity Inc.

Singapore . 247 parts In-Stock

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$49.000

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Kepictronics

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Kulean Microsystems

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Lixinc

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TANS Electronics

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Problanco Electronics

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Continental Prestige Electronics

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Argo Parts USA

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A-Z Elektronik GmbH

Germany . 1,890 parts In-Stock

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UHIMA Technologies

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Corohmni

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SupplyDigital Components

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Microchip USA

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Cyclops Electronics Ltd (Excess)

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Overview

Elevate your electronic designs with the MC14106BCPG by Onsemi, a high-quality logic gate that offers unparalleled performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and innovative solutions, this logic gate is perfect for a wide range of applications. From industrial automation to consumer electronics, the MC14106BCPG delivers fast propagation delay and low power consumption, making it a cost-effective and efficient choice for your projects. Upgrade your systems today with the MC14106BCPG and experience the superior quality and value Onsemi has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable applications.

Propagation Delay: 250 ns

With a low propagation delay of 250 ns, this logic gate ensures fast and efficient signal processing.

No. of Functions: 6

Offering 6 functions in a single package, this logic gate provides versatility and flexibility in circuit design.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to integrate this logic gate into existing circuit layouts.

Nominal Supply Voltage: 5V

With a nominal supply voltage of 5V, this logic gate is compatible with a wide range of electronic systems.

Power Supplies: 5/15V

Supporting dual power supplies of 5V and 15V, this logic gate can be used in various voltage environments.

No. of Terminals: 14

The 14 terminals on this logic gate provide ample connectivity options for complex circuit configurations.

Package Style: IN-LINE

The in-line package style allows for space-efficient placement on a circuit board, maximizing layout flexibility.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this logic gate is suitable for high-temperature environments.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55°C makes this logic gate versatile in extreme conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish ensures a reliable electrical connection and corrosion resistance for long-term usage.

Terminal Position: DUAL

Featuring dual terminal positions, this logic gate offers flexibility in mounting options on a circuit board.

Maximum Seated Height: 4.69 mm

The low maximum seated height of 4.69 mm allows for compact and space-saving circuit designs.

Width: 7.62 mm

The narrow width of 7.62 mm makes this logic gate suitable for applications with limited space constraints.

Minimum Supply Voltage: 3V

With a minimum supply voltage requirement of 3V, this logic gate can operate efficiently in low-power scenarios.

Peak Reflow Temperature: 260 C

The high peak reflow temperature of 260°C ensures robust solder connections during assembly processes.

Length: 18.86 mm

The moderate length of 18.86 mm provides a balance between compactness and ease of handling during installation.

Temperature Grade: MILITARY

Designed to meet military-grade temperature requirements, this logic gate offers reliability in harsh environments.

Schmitt Trigger: YES

With a built-in Schmitt trigger, this logic gate provides noise immunity and signal stability for precise output control.

Technology: CMOS

Utilizing CMOS technology, this logic gate offers low power consumption and high noise immunity for efficient operation.

Terminal Form: THROUGH-HOLE

Featuring through-hole terminals, this logic gate ensures secure and reliable connections on a circuit board.

Packing Method: RAIL

Packaged in a rail format, this logic gate is convenient for automated assembly processes.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54 mm allows for easy integration with commonly used connectors and sockets.

Maximum Supply Voltage: 18V

With a maximum supply voltage of 18V, this logic gate can handle high voltage inputs for versatile applications.

Technical Specifications

Logic Gates MC14106BCPG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.86 mm

Logic IC Type:

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

4.69 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

MC14106BCPG Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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