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MC14001BCPG

Onsemi

MC14001BCPG by Onsemi

MC14001BCPG by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 250ns propagation delay at 5V. It operates in a temperature range of -55 to 125 °C and is suitable for military-grade applications requiring high-speed signal processing.

Median Price

$0.258

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Nova Conductors

Japan . 22 parts In-Stock

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$0.258

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Chip Stock

USA . 34,000 parts In-Stock

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Vyrian

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Digiode

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Bristol Electronics

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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Velocity Electronics

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Continental Prestige Electronics

USA . 5,595 parts In-Stock

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$0.246

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$0.241

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Argo Parts USA

USA . 3,726 parts In-Stock

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$0.246

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$0.239

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Aranea Global

USA . 2,000 parts In-Stock

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$0.253

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$0.243

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AZTECH Wire

Italy . 572 parts In-Stock

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$6.611

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Aztec Data Supply Inc.

USA . 2,608 parts In-Stock

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$10.333

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$18.248

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$16.606

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$14.963

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Ampacity Inc.

Singapore . 254 parts In-Stock

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$34.000

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Component Stockers USA

USA . 737 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 23,281 parts In-Stock

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Kepictronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 6,385 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 840 parts In-Stock

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Problanco Electronics

Mexico . 670 parts In-Stock

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UHIMA Technologies

Türkiye . 595 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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Microchip USA

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Overview

Unlock the power of reliable logic gates with the MC14001BCPG by Onsemi. This top-quality product boasts a durable plastic/epoxy package and 4 functions, perfect for a variety of applications. With a fast propagation delay and versatile supply voltage range, this logic gate offers exceptional performance and flexibility. Trust in Onsemi's reputation for excellence and invest in a product that delivers value and reliability to customers. Experience the advantages of precision engineering with the MC14001BCPG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and resistant to damage.

Propagation Delay At Nominal Supply: 250 ns

Low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

No. of Functions: 4

Having 4 functions in one package provides compactness and efficiency in circuit design.

No. of Inputs: 2

With 2 inputs, this logic gate can perform basic logical operations efficiently.

Nominal Supply Voltage / Vsup (V): 5

Operating at a commonly used voltage of 5V makes this product compatible with a wide range of systems.

Load Capacitance (CL): 50 pF

Suitable load capacitance ensures stable operation and reliable signal processing.

Power Supplies (V): 5/15

Support for multiple power supply voltages adds versatility to the product, allowing it to be used in a variety of applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature enables the logic gate to function reliably even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows the product to be used in both hot and cold environments without issues.

Technology: CMOS

CMOS technology provides low power consumption, high noise immunity, and fast switching speeds, making this logic gate efficient and reliable.

Technical Specifications

Logic Gates MC14001BCPG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.86 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.69 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

MC14001BCPG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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