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MC10E195FN

Onsemi

MC10E195FN by Onsemi

MC10E195FN by Onsemi is a delay line with 4.72ns propagation delay at 5V, suitable for ECL technology applications. It features 127 taps/steps, programmable delay, and operates b/w -5.2V to 5.7V supply voltage range in a square chip carrier package.

Median Price

$3.430

Lifecycle Status

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19

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1k+

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Rochester

USA . 8 parts In-Stock

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-

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$3.430

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$3.070

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$2.890

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$2.890

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Digiode

USA . 265 parts In-Stock

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$3.629

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DF Sales Co.

USA . 903 parts In-Stock

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$6.400

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DF Sales Co.

USA . 903 parts In-Stock

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$6.400

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Bristol Electronics

USA . 31 parts In-Stock

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$6.720

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$3.360

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Vyrian

USA . 6,288 parts In-Stock

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MRC Electronics

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Elcom Components

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R&J Components

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Resion

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EMSNET

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A2Z Electronics, Inc.

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Connector Distribution Corp

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Right Parts Inc.

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Prism Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Semi Source

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Corphita

USA . 905 parts In-Stock

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$3.438

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$3.438

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Corohmni

South Africa . 124 parts In-Stock

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$3.820

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Problanco Electronics

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TANS Electronics

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Microchip USA

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SupplyDigital Components

Austria . 2,149 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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Perfect Parts

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Overview

Experience unparalleled precision and reliability with the MC10E195FN delay line by Onsemi. Crafted with cutting-edge technology, this chip carrier package offers a nominal total delay of 3.63 ns and 127 taps/steps for ultimate versatility. With a maximum power supply current of 156 mA and programmable capabilities, this delay line is ideal for a wide range of applications requiring precise timing control. Trust in Onsemi's reputation for quality and innovation, and elevate your electronic projects with the MC10E195FN.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the delay line resistant to external elements and extending its lifespan.

Propagation Delay At Nominal Supply: 4.72 ns

Offers a low propagation delay, ensuring quick signal processing and minimal delay in the output.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, making it compatible with many different systems and applications.

Power Supplies (V): -5.2

Supports a negative power supply voltage, which can be useful in certain circuit configurations.

No. of Terminals: 28

Provides a sufficient number of terminals for connecting the delay line to other components in the circuit.

Package Style (Meter): CHIP CARRIER

Uses a chip carrier package style, which is compact and space-efficient, ideal for high-density circuit designs.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, ensuring reliable performance in various environmental conditions.

Output Characteristics: OPEN-EMITTER

Offers open-emitter output characteristics, allowing flexibility in connecting to different types of circuit configurations.

Minimum Operating Temperature: 0 °C

Can operate effectively at low temperatures, making it suitable for a wide range of applications.

Technical Specifications

Delay Lines MC10E195FN attributes and parameters. Explore more Delay Lines devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

Family:

10E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.505 mm

Logic IC Type:

No. of Functions:

1

No. of Taps/Steps:

127

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

156 mA

Programmable Delay Line:

YES

Propagation Delay At Nominal Supply:

4.72 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Delay Lines

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Total Delay (td):

3.63 ns

Width:

11.505 mm

Trade Compliance

MC10E195FN Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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