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MC100LVELT22DR2

Onsemi

MC100LVELT22DR2 by Onsemi

MC100LVELT22DR2 by Onsemi is a voltage level translator with 2 functions, operating at 3.3V. It has a max delay of 0.6ns and interfaces TTL/CMOS to PECL signals. Ideal for industrial applications requiring precise signal translation in compact designs.

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Bristol Electronics

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Dan-Mar Components

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Zilex Electronics Inc.

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ACDS - Activité Composants Distribution Service

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Legend Electronics Inc.

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Vyrian

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Connector Distribution Corp

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Right Parts Inc.

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Semi Source

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MRC Electronics

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Digiode

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PC Components Company LLC

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Metaverse IC Inc.

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Overview

Unlock the potential of your electronic designs with the MC100LVELT22DR2 by Onsemi, a top-tier manufacturer known for quality and reliability. This voltage level translator is perfect for a wide range of applications, offering seamless communication between TTL/CMOS and PECL interfaces. With its compact design and industrial-grade temperature range, this product ensures optimal performance in any environment. Experience the value and benefits of precise signal translation with the MC100LVELT22DR2, setting your projects apart with ease and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protects the internal components, making this product long-lasting and reliable.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 3.8 V

With a maximum supply voltage of 3.8V, this voltage level translator can handle higher voltage inputs, increasing its versatility and compatibility with various systems.

No. of Functions: 2

Having 2 functions in one device provides flexibility in voltage translation requirements, making this product suitable for a wider range of applications.

Package Shape: RECTANGULAR

The rectangular package shape enables easy integration into circuit designs and ensures compatibility with standard mounting practices.

Power Supplies (V): 3.3

Operating at a power supply of 3.3V ensures efficient performance and compatibility with common voltage standards in electronic devices.

No. of Terminals: 8

Having 8 terminals allows for connection to multiple input and output signals, enabling complex voltage translation tasks to be accomplished with ease.

Minimum Supply Voltage: 3 V

The minimum supply voltage of 3V ensures stable operation even with lower input voltages, providing reliability in various operating conditions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this translator can withstand elevated temperatures, making it suitable for industrial applications where heat resistance is essential.

Output Characteristics: OPEN-EMITTER

The open-emitter output characteristics offer flexibility in connecting external components, allowing for customized signal processing and integration into different circuit configurations.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C ensures reliable performance in extreme cold conditions, making this product suitable for a wide range of environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance, ensuring secure and long-lasting connections in electronic assemblies.

Terminal Position: DUAL

The dual terminal position allows for easy connection to multiple input and output signals, facilitating efficient voltage translation between different levels.

Maximum Seated Height: 1.75 mm

The low maximum seated height of 1.75mm helps reduce the overall profile of the device, enabling compact and space-saving designs in electronic systems.

Width: 3.9 mm

With a width of 3.9mm, this translator is suitable for applications with limited space, providing flexibility in circuit layout and design.

Output Polarity: COMPLEMENTARY

The complementary output polarity ensures accurate translation of signals between different voltage levels, maintaining signal integrity and stability in data transmission.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this device can withstand high-temperature soldering processes, ensuring secure and reliable connections during assembly.

Length: 4.9 mm

The compact length of 4.9mm allows for easy integration into circuit layouts with limited space, providing flexibility and versatility in design.

Temperature Grade: INDUSTRIAL

The industrial temperature grade indicates that this translator is designed to operate reliably in harsh environmental conditions, making it suitable for rugged industrial applications.

Technology: ECL

Utilizing ECL technology ensures high-speed and efficient voltage translation, making this product ideal for applications requiring fast signal processing and low latency.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering, ensuring secure connections and reliable performance in demanding operating conditions.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V ensures consistent and stable performance, making this translator compatible with standard voltage requirements in electronic systems.

Maximum Delay: 0.6 ns

With a maximum delay of 0.6ns, this translator offers high-speed signal processing capabilities, making it suitable for applications that require minimal signal propagation delay.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm allows for easy connection to standard pitch components, facilitating quick and efficient integration into circuit designs.

Interface IC Type: TTL/CMOS TO PECL TRANSLATOR

Supporting TTL/CMOS to PECL translation enables seamless communication between devices operating at different voltage levels, making this product a versatile and reliable solution for voltage level conversion needs.

Technical Specifications

Voltage Level Translators MC100LVELT22DR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

.6 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Bits:

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

3.8 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MC100LVELT22DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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