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MC10ELT20D

Onsemi

MC10ELT20D by Onsemi

MC10ELT20D by Onsemi is a voltage level translator with max supply voltage of 5.25V and min of 4.75V, operating b/w -40 to 85 °C. It has a max delay of 1.25ns, suitable for TTL/CMOS to PECL translation in industrial applications due to ECL technology and small outline package style.

Median Price

$1.663

Lifecycle Status

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21

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1k+

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Rochester

USA . 2,174 parts In-Stock

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$1.600

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$1.330

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$1.180

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DigiKey

USA . 2,174 parts In-Stock

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Verical

USA . 2,174 parts In-Stock

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$1.663

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$1.475

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$1.475

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Vyrian

USA . 1,102 parts In-Stock

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Digiode

USA . 1,070 parts In-Stock

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Component Electronics Inc.

Canada . 70 parts In-Stock

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$3.080

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$2.310

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$2.000

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$3.080

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American Microsemiconductor Inc.

USA . 2,276 parts In-Stock

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$3.990

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DigiKey Marketplace

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R&J Components

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Prism Electronics

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Inventory MP

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Bristol Electronics

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PC Components Company LLC

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Resion

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A2Z Electronics, Inc.

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Connector Distribution Corp

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Right Parts Inc.

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DF Sales Co.

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Microfarads

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LWI Electronics Inc

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Benley Electronics

USA . 22 parts In-Stock

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Corohmni

South Africa . 420 parts In-Stock

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Corphita

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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TANS Electronics

Latvia . 4,620 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

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Perfect Parts

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UHIMA Technologies

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GreenTree Electronics

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Problanco Electronics

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Overview

Enhance your electronic designs with the MC10ELT20D voltage level translator by Onsemi. With a reputation for high-quality products, Onsemi delivers reliable solutions for a variety of applications. The MC10ELT20D offers seamless voltage translation, enabling smooth communication between different logic levels. Its compact design and wide operating temperature range make it ideal for industrial use. Trust Onsemi to provide you with innovative technology that enhances the efficiency and performance of your projects. Elevate your designs with the MC10ELT20D and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and helps in protecting the internal components of the voltage level translator.

Maximum Supply Voltage: 5.25 V

With a high maximum supply voltage, this voltage level translator can handle a wide range of input signals without the risk of damage.

Minimum Supply Voltage: 4.75 V

The low minimum supply voltage ensures that the voltage level translator can operate efficiently even with lower power sources.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the voltage level translator to function reliably in various environmental conditions.

Output Characteristics: OPEN-EMITTER

The open-emitter output characteristics provide flexibility in connecting the voltage level translator to other components or systems.

Technical Specifications

Voltage Level Translators MC10ELT20D attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

1.25 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC10ELT20D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-521-8348, 5962015218348

NIIN

015218348

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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