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MC10H350M

Onsemi

MC10H350M by Onsemi

MC10H350M by Onsemi is a voltage translator with 4 functions, operating at 5V. It features PECL to TTL translation, 5ns delay, and 3-STATE output. Widely used in commercial applications requiring ECL technology for signal conversion.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,697 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,977 parts In-Stock

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Problanco Electronics

Mexico . 7,920 parts In-Stock

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SupplyDigital Components

Austria . 5,844 parts In-Stock

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Kulean Microsystems

USA . 3,821 parts In-Stock

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Corphita

USA . 859 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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Microchip USA

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Overview

Upgrade your electronics with the MC10H350M voltage level translator from Onsemi. With a focus on quality and innovation, Onsemi delivers reliable products that meet the highest industry standards. The MC10H350M is perfect for applications requiring precise voltage translation, offering customers seamless integration and enhanced performance. Experience the value and benefits of this advanced technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components, ensuring a longer lifespan for the product.

Maximum Supply Voltage: 5.25 V

Can tolerate high supply voltage, allowing for compatibility with a wide range of applications without risk of damage.

No. of Functions: 4

Having multiple functions in one device reduces the need for additional components, saving space and simplifying circuit design.

Minimum Operating Temperature: 0 °C

Can operate in low temperature environments, making it suitable for a variety of industrial and commercial applications.

Nominal Supply Voltage: 5 V

Standard supply voltage of 5V ensures compatibility with most systems and devices.

Technical Specifications

Voltage Level Translators MC10H350M attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

5 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.2 mm

No. of Bits:

1

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.05 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.275 mm

Trade Compliance

MC10H350M Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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