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MC100ELT24DR2G

Onsemi

MC100ELT24DR2G by Onsemi

MC100ELT24DR2G by Onsemi is a voltage level translator with 8 terminals and ECL technology. It operates b/w -40 to 85 °C, translating TTL to ECL signals with a delay of 2 ns. Ideal for industrial applications requiring precise signal translation in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,187 parts In-Stock

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Digiode

USA . 1,276 parts In-Stock

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Avant Electronics Limited

UK . 100 parts In-Stock

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AZTECH Wire

Italy . 951 parts In-Stock

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$15.070

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951

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Metaverse IC Inc.

Canada . 10,500 parts In-Stock

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TANS Electronics

Latvia . 6,260 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,406 parts In-Stock

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Microchip USA

USA . 4,381 parts In-Stock

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SupplyDigital Components

Austria . 3,134 parts In-Stock

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Corphita

USA . 1,155 parts In-Stock

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Problanco Electronics

Mexico . 838 parts In-Stock

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Kulean Microsystems

USA . 386 parts In-Stock

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UHIMA Technologies

Türkiye . 363 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Elevate your voltage level translation needs with the MC100ELT24DR2G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that are reliable and efficient. The MC100ELT24DR2G is perfect for a variety of applications, offering seamless integration and high performance. With its compact design and advanced technology, this voltage level translator provides unparalleled value and benefits to customers, ensuring smooth operation and enhanced functionality. Upgrade your projects with the MC100ELT24DR2G and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package of this voltage level translator lightweight and durable.

Surface Mount: YES

Being surface mountable allows for easy and secure mounting on PCBs, saving space and ensuring a reliable connection.

Maximum Supply Voltage: 5.5 V

Ability to handle a maximum supply voltage of 5.5 V makes it suitable for a wide range of applications without the risk of damage.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact form factor, ideal for space-constrained designs.

Power Supplies (V): 5,-4.5/-5.2

Support for multiple power supply voltages allows for versatile compatibility with different system requirements.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options for interfacing with other components in the circuit.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 to 85 °C ensures reliable performance in varying environmental conditions.

Maximum Delay: 2 ns

The low maximum delay of 2 ns ensures fast signal translation, making it suitable for high-speed applications.

Technical Specifications

Voltage Level Translators MC100ELT24DR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

Nominal Negative Supply Voltage:

-5 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-4.5/-5.2

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC100ELT24DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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