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MC10H606FN

Onsemi

MC10H606FN by Onsemi

MC10H606FN by Onsemi is a voltage level translator with 6 functions, operating at 5V. It has a max supply voltage of 5.25V and min of 4.75V, suitable for TTL/CMOS to PECL translation applications. The chip carrier package style measures 11.505mm in length and width, with an output delay of 3.75ns at temperatures ranging from 0 to 85 °C.

Median Price

$7.065

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 421 parts In-Stock

1+ parts

-

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$6.280

1k+ parts

$5.620

10k+ parts

$5.290

421

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$6.280

$5.620

$5.290

Verical

USA . 421 parts In-Stock

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$7.850

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421

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$7.850

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Digiode

USA . 1,182 parts In-Stock

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$6.650

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Vyrian

USA . 2,908 parts In-Stock

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Prism Electronics

USA . 122 parts In-Stock

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Cyclops Electronics Ltd

UK . 11 parts In-Stock

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Corphita

USA . 2,381 parts In-Stock

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$6.300

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$6.300

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Corohmni

South Africa . 198 parts In-Stock

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$7.000

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TANS Electronics

Latvia . 6,666 parts In-Stock

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Problanco Electronics

Mexico . 5,450 parts In-Stock

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SupplyDigital Components

Austria . 3,161 parts In-Stock

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Kulean Microsystems

USA . 1,575 parts In-Stock

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UHIMA Technologies

Türkiye . 639 parts In-Stock

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Continental Prestige Electronics

USA . 421 parts In-Stock

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Microchip USA

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Kepictronics

USA . 336 parts In-Stock

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Perfect Parts

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Overview

Upgrade your electronic designs with the MC10H606FN voltage level translator from Onsemi. Known for their high-quality components, Onsemi delivers reliable products that meet industry standards. The MC10H606FN is perfect for applications requiring seamless voltage translation, offering customers the value of improved performance and compatibility. Say goodbye to compatibility issues and hello to smooth operation with this versatile and efficient voltage level translator.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the voltage level translator.

Maximum Supply Voltage: 5.25 V

Allows for compatibility with various systems that require a higher supply voltage.

No. of Functions: 6

Offers versatility and capability to handle multiple functions within a single device.

Minimum Operating Temperature: 0 °C

Ensures reliable operation even in low temperature environments.

Maximum Delay: 3.75 ns

Provides fast transition times for efficient signal processing.

Technical Specifications

Voltage Level Translators MC10H606FN attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Additional Features:

DIFFERENTIAL PECL INPUT ALSO POSSIBLE

Maximum Delay:

3.75 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.505 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

6

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

REGISTER

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC10H606FN Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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