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M74VHC1GT08DTT1G

Onsemi

M74VHC1GT08DTT1G by Onsemi

M74VHC1GT08DTT1G by Onsemi is a logic gate with 2 inputs, 3.3V nominal voltage, and 11ns propagation delay. It is used in applications requiring fast signal processing and operates at temperatures ranging from -55 to 125°C. The package style is small outline with a thin profile, making it suitable for compact electronic designs.

Median Price

$0.073

Lifecycle Status

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1k+

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Chip1Stop

Japan . 50 parts In-Stock

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$1.290

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Arrow

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Verical

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Nova Conductors

Japan . 450 parts In-Stock

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Component Electronics Inc.

Canada . 90 parts In-Stock

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$0.770

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$0.770

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Digiode

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Flip Electronics

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Cyclops Electronics Ltd

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TME

Poland . 90 parts In-Stock

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$0.137

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$0.084

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Elcom Components

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Prism Electronics

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Semicontronic

India . 1,779 parts In-Stock

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$0.062

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$0.060

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Ampacity Inc.

Singapore . 1,520 parts In-Stock

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$0.062

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Corohmni

South Africa . 168 parts In-Stock

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Argo Parts USA

USA . 4,112 parts In-Stock

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Continental Prestige Electronics

USA . 3,403 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Microchip USA

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Corphita

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AZTECH Wire

Italy . 533 parts In-Stock

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Aztec Data Supply Inc.

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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iodParts Technologies Inc.

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Alle Elektronik GmbH

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SupplyDigital Components

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UHIMA Technologies

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Kulean Microsystems

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Speed Components Ltd (Excess)

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Overview

Unlock the power of precision with the M74VHC1GT08DTT1G by Onsemi. Crafted with top-notch quality and expertise, this logic gate offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides fast propagation delay and low power consumption. With dual terminals and a compact design, it's perfect for space-constrained projects. Trust in Onsemi to deliver cutting-edge technology that brings value and efficiency to your designs. Elevate your projects with the M74VHC1GT08DTT1G - the ultimate choice for innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Propagation Delay At Nominal Supply: 11 ns

This low propagation delay ensures fast and efficient operation of the logic gates.

Surface Mount: YES

The option for surface mount installation allows for easy and space-efficient integration on PCBs.

No. of Inputs: 2

With 2 inputs, this logic gate is suitable for basic digital logic operations.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is common and widely available, making it easy to power the logic gate.

Load Capacitance (CL): 50 pF

The low load capacitance allows for quick charging and discharging of the gate, improving overall performance.

Power Supplies (V): 3.3/5

This logic gate can operate with two common voltage supplies, providing flexibility in design.

No. of Terminals: 5

The compact design with 5 terminals saves space on the PCB.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile design with shrink pitch make the product suitable for compact electronic devices.

Maximum I (ol): 8 Amp

The high maximum output current capability of 8A ensures robust and reliable operation.

Propagation Delay (tpd): 16.5 ns

The low propagation delay ensures quick response time for logic operations.

Maximum Operating Temperature: 125 °C

The wide operating temperature range makes the logic gate suitable for various environments.

Output Characteristics: 3-STATE

The 3-state output feature provides additional flexibility in designing digital circuits.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures makes the logic gate suitable for harsh environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and electrical conductivity.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout options.

Maximum Seated Height: 1.1 mm

The low seated height saves space and is suitable for slim devices.

Width: 1.5 mm

The narrow width allows for high-density PCB designs.

Minimum Supply Voltage (Vsup): 3 V

The ability to operate at a minimum supply voltage of 3V ensures compatibility with a wide range of systems.

Maximum Time At Peak Reflow Temperature (s): 40

The product can withstand peak reflow temperatures for up to 40 seconds during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures reliable solder joints during assembly.

Length: 3 mm

The compact length of 3mm saves space on the PCB.

Temperature Grade: MILITARY

The military-grade temperature rating ensures durability and reliability in demanding conditions.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical strength and easy soldering during assembly.

Packing Method: TR

The tape and reel packing method allows for efficient automation in production.

Terminal Pitch: 0.95 mm

The small terminal pitch saves space and allows for high-density PCB designs.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V ensures the logic gate can withstand voltage spikes or fluctuations.

Maximum Power Supply Current (ICC): 50 mA

The product has a maximum power supply current of 50mA, ensuring stable operation under normal conditions.

Technical Specifications

Logic Gates M74VHC1GT08DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

16.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.5 mm

Trade Compliance

M74VHC1GT08DTT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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