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M74VHC1G135DFT2G-L22038

Onsemi

M74VHC1G135DFT2G-L22038 by Onsemi

M74VHC1G135DFT2G-L22038 by Onsemi is a CMOS Logic Gate with 2 inputs, 3V nominal voltage, and 19.6ns propagation delay. It is used in applications requiring open-drain output characteristics, operates b/w -55 to 125 °C, and has a small outline package style.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 51,000 parts In-Stock

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Rochester

USA . 24,000 parts In-Stock

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$0.036

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$0.030

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$0.027

24,000

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$0.036

$0.030

$0.027

Distributors (In-Stock)

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Digiode

USA . 149 parts In-Stock

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$0.028

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149

$0.028

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Flip Electronics

USA . 48,000 parts In-Stock

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Vyrian

USA . 4,239 parts In-Stock

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Corphita

USA . 952 parts In-Stock

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$0.027

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952

$0.027

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Corohmni

South Africa . 98 parts In-Stock

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$0.030

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Microchip USA

USA . 10,602 parts In-Stock

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$0.296

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AZTECH Wire

Italy . 919 parts In-Stock

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$14.930

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Component Stockers USA

USA . 552 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 6,951 parts In-Stock

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SupplyDigital Components

Austria . 6,824 parts In-Stock

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Problanco Electronics

Mexico . 6,282 parts In-Stock

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Kulean Microsystems

USA . 4,966 parts In-Stock

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UHIMA Technologies

Türkiye . 989 parts In-Stock

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Overview

Experience superior performance and reliability with the M74VHC1G135DFT2G-L22038 logic gate from Onsemi. Designed with precision and quality in mind, this product offers a wide range of applications in various industries. With its compact design and advanced technology, this logic gate provides fast response times and efficient operation. Trust Onsemi to deliver products that exceed expectations, providing you with the value and benefits you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes this product suitable for compact circuit designs and automated assembly processes, saving space and time during production.

No. of Inputs: 2

Having 2 inputs allows for more flexibility in logic operations and can accommodate a wider range of input signals.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this product suitable for a variety of low-power applications and helps in reducing power consumption.

Propagation Delay (tpd): 19.6 ns

With a low propagation delay, this logic gate can quickly process input signals, leading to faster response times in the circuit.

Technology: CMOS

Utilizing CMOS technology provides a good balance between power consumption and processing speed, making this product efficient for a wide range of applications.

Technical Specifications

Logic Gates M74VHC1G135DFT2G-L22038 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

80 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

19.6 ns

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

M74VHC1G135DFT2G-L22038 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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